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系統識別號 U0026-2908201609583000
論文名稱(中文) 溶液法製作CZTSSe薄膜太陽能電池之研究
論文名稱(英文) Investigation of CZTSSe Thin Film Solar Cells Fabricated By Solution Process
校院名稱 成功大學
系所名稱(中) 電機工程學系
系所名稱(英) Department of Electrical Engineering
學年度 104
學期 2
出版年 105
研究生(中文) 戴嘉麒
研究生(英文) Chia-Chi Tai
學號 N26031063
學位類別 碩士
語文別 中文
論文頁數 79頁
口試委員 指導教授-施權峰
口試委員-劉國雄
口試委員-尤正祺
口試委員-李偉民
口試委員-蕭竹芸
中文關鍵字 銅鋅錫硒  水溶液  烘烤  鹼金屬摻雜 
英文關鍵字 Cu2ZnSn(S,Se)4(CZTSSe)  Solution  Baking  Alkali metal doping 
學科別分類
中文摘要 CZTSSe為具有潛力的光電材料,與現在的CdTe或CIGS相比,其組成元素地殼含量豐富,成本低廉且對環境友善。
本研究使用DMSO溶液旋轉塗布法製作CZTSSe薄膜,研究中探討不同烘烤溫度對於前驅物與硒化後之CZTSSe薄膜之影響,利用SEM、EDS分析硒化前後薄膜與成分比例之變化、XRD與Raman確認CZTSSe薄膜之晶體結構,將CZTSSe薄膜製作為元件並透過I-V量測了解其光電特性。
由結果顯示,烘烤溫度較高,薄膜之成分組成較符合合理之比例,其表面緻密度較高,隨後利用不同烘烤條件製作元件,其效率表現也隨烘烤溫度較高而有上升的趨勢。
在烘烤過程中使用混合烤溫的方式能夠進一步使表面緻密度提高,對元件的表現有相當的幫助,使用此方法所製作之元件效率可達4.74%,開路電壓為0.24V,短路電流密度為43.65mA/cm2,填充因子為45.25%。
在溶液中摻雜鉀可有效改善晶粒尺寸與緻密度,與混合烤溫法的相互運用時,其表面會生成細晶層,此細晶層之生成原因仍需進一步探討,最後製作之元件效率並無顯著之助益,其為4.59%,開路電壓為0.28V,短路電流為37.25mA/cm2,填充因子為44.08%。
英文摘要 CZTSSe is a promising material for thin film solar cells, which consists of earth-abundant, low-cost and environmentally friendly material compared to CIGS or CdTe.CZTSe thin films were fabricated using DMSO-based spin coating technique. In this work, we investigate the effects of baking temperature on the precursor and selenized CZTSSe thin film. EDS and SEM were performed before and after selenization to analyze the change of composition and morphology of films. XRD and Raman were used to confirm the crystal structure of CZTSSe thin film. CZTSSe-based device was measured through I-V measurement in order to know the photoelectric property.
The result shows that with higher baking temperature, composition was closer to ideal ratio, denser surface and higher efficiency solar cells were obtained. The surface becomes much denser by using the multi-temperature baking, which is beneficial to the performance of device. The best solar cells showed a conversion efficiency of 4.74%, open-circuit voltage of 0.24V, short-circuit current of 43.65mA/cm2, fill factor of 45.25%.
Through K-doping in the solution could effectively improve the grain size and surface density. While applying this method with multi-temperature baking, a fine grain layer was observed on the surface, the cause of which still needs further investigation. Using this approach, the best solar cells showed a conversion efficiency of 4.59%, open-circuit voltage of 0.28V, short-circuit current of 37.25mA/cm2, fill factor of 44.08%.
論文目次 摘要 I
Abstract II
誌謝 XII
目錄 XIII
表目錄 XV
圖目錄 XVI
第一章 緒論 1
1-1前言 1
1-2太陽能電池簡介 2
1-2-1矽晶太陽能電池 2
1-2-2薄膜太陽能電池 2
1-2-3 CZTSSe太陽能電池 2
第二章 理論基礎 4
2-1半導體 4
2-2 P-N接面 5
2-3異質接面 6
2-4金屬半導體接面 7
2-4-1蕭特基能障(Schottky barrier) 8
2-4-2歐姆接觸(Ohmic contact) 9
2-5太陽能電池原理 10
2-5-1太陽輻射(Solar radiation) 10
2-5-2操作原理 12
2-5-3太陽能電池等效電路 14
2-5-4串聯電阻與並聯電阻的效應 15
2-5-5太陽能電池的參數 16
2-5-6太陽能電池量子效率 17
2-6銅鋅錫硒(CZTSSe)太陽能電池文獻回顧 19
2-6-1材料特性 19
2-6-2 CZTSSe的晶格缺陷(Defect) 20
2-6-3元素比例與二次相(Secondary phase) 21
2-6-4鹼金屬對CZTSSe吸收層的影響 23
2-6-5 CZTSSe太陽能電池研究發展及效率較佳之團隊 23
2-7研究動機 25
第三章 實驗方法 26
3-1太陽能電池結構簡介 26
3-1-1基板 26
3-1-2背電極 27
3-1-3吸收層 27
3-1-4緩衝層(Buffer layer) 27
3-1-5窗口層(Window layer) 28
3-1-6前電極 28
3-2實驗流程 28
3-2-1實驗流程架構 28
3-2-2鉬基板準備與清洗 29
3-2-3銅鋅錫前驅物溶液準備與塗布 29
3-2-4硒化爐管製程 29
3-2-5緩衝層CdS製備 30
3-2-6窗口層製備 30
3-2-7金屬導電電極製備 31
3-3儀器介紹 31
3-3-1高解析掃描電子顯微鏡(HR-SEM) 31
3-3-2多功能X光繞射儀 32
3-3-3拉曼光譜分析 34
3-3-4太陽光模擬器與IV量測系統 35
第四章 結果與討論 36
4-0前期研究 36
4-1烘烤溫度對於CZTSSe薄膜之探討 39
4-1-1烘烤溫度對吸收層微結構的影響 40
4-1-2烘烤溫度對於元件特性的影響 49
4-1-3烤溫3000C混合2450C之製程 60
4-1-4結論 64
4-2摻雜鉀(K)對於CZTSSe薄膜之探討 65
4-2-1摻雜鉀對吸收層微結構的影響 66
4-2-2摻雜鉀對於元件特性的影響 68
4-2-3結論 72
第五章 總結及未來規劃 74
5-1總結 74
5-2未來規劃 74
參考文獻 76
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