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系統識別號 U0026-2707201516140100
論文名稱(中文) 磷光材料摻雜於高分子太陽能電池之研究
論文名稱(英文) Investigation of phosphorescent material-doped polymer solar cell
校院名稱 成功大學
系所名稱(中) 微電子工程研究所
系所名稱(英) Institute of Microelectronics
學年度 103
學期 2
出版年 104
研究生(中文) 蔡亦哲
研究生(英文) Yi-Jhe Tsai
學號 Q16024236
學位類別 碩士
語文別 英文
論文頁數 99頁
口試委員 指導教授-許渭州
口試委員-方炎坤
口試委員-周榮泉
口試委員-李景松
口試委員-王欽戊
口試委員-賴英男
口試委員-林育賢
中文關鍵字 高分子太陽能電池  磷光材料  摻雜 
英文關鍵字 Polymer solar cell  Phosphorescent material  Doping 
學科別分類
中文摘要 在本論文中,為了提升元件轉換效率我們將不同的磷光材料分別摻雜於主動層中製作高分子太陽能電池。磷光材料Ir(ppz)3、Ir(mppy)3、Ir(piq)2(acac)分別摻雜於P3HT和ICBA中形成塊材結構,使三重態中產生更多激子。由於激子在三重態的存活時間較在單重態長,因此能夠有更多的載子到達接面,使元件的短路電流大幅提升。除此之外,我們透過改變磷光材料的摻雜濃度及主動層的退火參數來獲得最佳化的元件轉換效率。雖然在主動層摻雜磷光材料能延長激子存活時間使電流改變,但是會破壞原本主動層的型態,因此元件的轉換效率必須在兩者中作取捨並最佳化。這有可能會造成摻雜磷光材料於主動層中卻使元件效率衰減的情況。所以我們探討不同磷光材料對元件特性的影響,像是載子傳輸的能力、主動層的表面型態、磷光材料在主動層的分布及延長激子存活時間等等。在本論文中摻雜Ir(ppz)3在其濃度為0.1wt%時有最好的轉換效率7.08%,其短路電流為 12.4 mA/cm2、開路電壓為0.85V、填充因子為66.7%。
英文摘要 In this thesis, we fabricated the polymer solar cells with doping different phosphorescent materials in active layer to enhance power conversion efficiency. The phosphorescent materials (Ir(ppz)3, Ir(mppy)3, Ir(piq)2(acac)) was respectively doped into the bulk heterojunction layer of P3HT and ICBA blend to form more excitons in the triplet state. Triplet-state excitons have longer lifetimes than singlet-state excitons. Therefore, more carriers were collected through the dissociation of excitons at the interface, resulting in the significant improvement of JSC. In order to optimize the device performance, we investigate the doping concentration of phosphorescent material and thermal annealing parameter of active layer. However, doping phosphorescent material is a trade-off between extend the exciton lifetime and damage original morphology in PCE of polymer solar cell. It is possible that decrease PCE of device when doping phosphorescent material. So we investigate the different phosphorescent materials carrier transport characteristics, surface morphology of active layer, distribution in active layer, and extended excitons lifetime. The optimal performance was doping 0.1wt% Ir(ppz)3 in P3HT:ICBA, which JSC is 12.4 mA/cm2, VOC is 0.85V, FF is 66.7%, and PCE is 7.08%.
論文目次 摘 要 I
Abstract II
誌謝 IV
Content V
Table Captions IX
Figure Captions XI
Chapter 1 Introduction 1
1-1 Background 1
1-1-1 Progress of Organic Solar Cell 2
1-1-2 Singlet State and Triplet State 3
1-2 Motivation 5
1-3 Organization 6
Chapter 2 Operation Principle 7
2-1 Solar Spectrum 7
2-2 Mechanism of Inorganic Solar Cell 8
2-3 Inorganic Solar Cell Characteristics 9
2-3-1 Open-Circuit Voltage (VOC) 9
2-3-2 Short-Circuit Current (ISC) 9
2-3-3 Fill Factor (FF) 10
2-3-4 Power Conversion Efficiency (PCE) 10
2-4 Mechanism of Organic Solar Cell 11
2-4-1 Photo-excitation into Excitons 12
2-4-2 Excitons Migration to Interfaces 12
2-4-3 Dissociated Charges 12
2-4-4 Charge Migration to Electrodes 13
2-5 Organic Solar Cell Characteristics 13
2-5-1 Dark Current Characteristics 13
2-5-2 Open-Circuit Voltage (VOC) 14
2-5-3 Short-Circuit Current (ISC) 14
2-5-4 Fill Factor (FF) 15
2-5-5 Power Conversion Efficiency (PCE) 16
Chapter 3 Experiment 17
3-1 Structure 17
3-2 Materials of Organic Solar Cell 17
3-3 Process of Device Fabrication 19
3-3-1 Pre-Cleaning ITO Substrate 19
3-3-2 UV Ozone Treatment of ITO Surface 19
3-3-3 Fabrication of Hole Transport Layer 20
3-3-4 Fabrication of Active Layer 20
3-3-5 Fabrication of Cathode 20
3-4 Measurements 20
3-4-1 Current-Voltage Measurement System 21
3-4-2 UV-Vis absorption spectrum 21
3-4-3 External Quantum Efficiency 21
3-4-4 Atomic Force Microscope 22
3-4-5 Space Charge Limited Current 22
3-4-6 Time-reserved Photoluminescence 23
3-4-7 Secondary Ion Mass Spectroscopy 23
Chapter 4 Results and Discussions 24
4-1 Device with Doping Ir(ppz)3 24
4-1-1 Ir(ppz)3 Doping Concentration 24
4-1-2 Ir(ppz)3 Annealing Treatment 25
4-1-3 UV-Vis Absorption Spectrum 26
4-1-4 External Quantum Efficiency 27
4-1-5 Doping Concentration of AFM 27
4-1-6 Doping Concentration of SCLC 28
4-1-7 Time-reserved Photoluminescence 29
4-1-8 Annealing Treatment AFM 30
4-1-9 Annealing Treatment SCLC 31
4-1-10 Secondary Ion Mass Spectroscopy 31
4-2 Device with Doping Ir(mppy)3 32
4-2-1 Ir(mppy)3 Doping Concentration 32
4-2-2 Ir(mppy)3 Annealing Treatment 33
4-2-3 UV-Vis Absorption Spectrum 34
4-2-4 External Quantum Efficiency 34
4-2-5 Doping Concentration AFM 35
4-2-6 Doping Concentration SCLC 35
4-2-7 Time-reserved Photoluminescence 36
4-2-8 Annealing Treatment AFM 37
4-2-9 Secondary Ion Mass Spectroscopy 38
4-2-10 Annealing Treatment SCLC 38
4-3 Device with Doping Ir(piq)2(acac) 39
4-3-1 Ir(piq)2(acac) Doping Concentration 39
4-3-2 Ir(piq)2(acac) Annealing Treatment 40
4-3-3 UV-Vis Absorption Spectrum 42
4-3-4 External Quantum Efficiency 42
4-3-5 Doping Concentration AFM 42
4-3-6 Doping Concentration SCLC 43
4-3-7 Time-reserved Photoluminescence 44
4-3-8 Annealing Treatment AFM 44
4-3-9 Secondary Ion Mass Spectroscopy 45
4-3-10 Annealing Treatment SCLC 45
Chapter 5 Conclusions 47
References 48
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