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系統識別號 U0026-2707201515442800
論文名稱(中文) 超音波霧化熱裂解法沉積氧化鋁於非平面式金氧半電容之特性研究
論文名稱(英文) Characterization of Al2O3 Deposition by Ultrasonic Spray Pyrolysis Technique for Non-planar MOS Capacitor
校院名稱 成功大學
系所名稱(中) 微電子工程研究所
系所名稱(英) Institute of Microelectronics
學年度 103
學期 2
出版年 104
研究生(中文) 王嘉亨
研究生(英文) Jia-Heng Wang
學號 Q16024286
學位類別 碩士
語文別 英文
論文頁數 53頁
口試委員 指導教授-許渭州
口試委員-劉漢胤
口試委員-方炎坤
口試委員-王水進
口試委員-劉文超
共同指導教授-江孟學
中文關鍵字 金氧半電容  非平面式結構  超音波霧化熱裂解法 
英文關鍵字 MOS capacitor  non-planar structure  ultrasonic spray pyrolysis deposition. 
學科別分類
中文摘要 本論文探討利用超音波霧化熱裂解法沉積氧化鋁於非平面式之金氧半電容。透過實驗發現,超音波霧化熱裂解法有非常良好的包覆及填洞能力,因此非常適合應用於非平面式結構的介電層。為了瞭解超音波霧化熱裂解法沉積之氧化鋁的組成,在本論文中使用了穿透式電子顯微鏡、原子力顯微鏡及化學分析電子儀來進行量測和探討。從穿透式電子顯微鏡拍出的圖可以看到,超音波霧化熱裂解法成長的氧化鋁薄膜非常均勻且完整的包覆矽通道。另外,在膜厚控制上超音波霧化熱裂解法也相當精準,氧化鋁沉積速率大約每分鐘3.5奈米,氧化鋁薄膜大約20nm。在原子力顯微鏡量測中,可以發現氧化鋁薄膜相當平整,其方均根(RMS)值約為0.75nm。更進一步,利用化學分析電子儀量測發現,利用超音波霧化熱裂解法沉積的氧化鋁之鋁和氧的比例約為2比3,表示其氧化鋁薄膜有很好的品質。在瞭解薄膜之材料分析之後,接著進行電容-電壓(C-V)及電流-電壓(I-V)之電性分析。從C-V曲線中,可以計算出等效氧化層厚度(EOT)和實際氧化層厚度(t_ox)。發現t_ox和穿透式電子顯微鏡量出的厚度非常接近。接著,由I-V曲線可以計算出閘極電流密度。和其他不同的介電層製程比較,從外插法得到的趨勢線可以看出使用超音波霧化熱裂解法沉積的氧化鋁薄膜在較小的EOT情況下也能有很好的抑制漏電的能力。因此超音波霧化熱裂解法有應用於非平面式結構之介電層的潛力。
英文摘要 This research proposes the characterization of aluminum oxide (Al2O3) deposition by ultrasonic spray pyrolysis (USP) technique for non-planar MOS capacitor. We found that the Al2O3 thin film deposited by USPD is very suitable as the dielectric layer of non-planar structure due to the excellent hole-filling and coverage ability.In order to analyze the oxide layer composition, we utilized the transmission electron microscopy (TEM), atomic force microscopy (AFM) and electron spectroscopy for chemical analysis (ESCA) in this research. First, from the TEM images, we found that the Al2O3 thin film is fully wrapped around the Si channel, and the uniformity of Al2O3 is very good. Furthermore, the deposition rate of Al2O3 deposited by USPD is about 3.5nm per minute. The USPD method showed good thickness controllability for dielectric process. From AFM images, we observed that the surface of Al2O3 deposited by USPD is quite smooth. The root mean square (RMS) of USPD case is just 0.75nm. Moreover, we certified the composition of Al2O3 by ESCA. We found that the aluminum/oxygen ratio is about 2 : 3. It indicate the high quality of Al2O3 deposited by USPD.
After material analysis, we executed the capacitance-voltage (C-V) and current-voltage (I-V) electrical characteristics analysis of our devices. We calculated the equivalent oxide thickness (EOT) and oxide thickness (t_ox) by capacitance value. We found that the calculated t_ox is quite similar to the oxide thickness measured from TEM. Then, we calculated the gate current density of our devices and compared to others dielectric layer process. The tendency of extrapolation line of USPD case shows good gate leakage immunity in small EOT. Therefore, the ultrasonic spray pyrolysis technique is suitable for the dielectric layer of non-planar structure.
論文目次 摘要 I
Abstract III
誌謝 V
Contents VII
Figure Captions IX
Table Captions XII
CHAPTER 1 INTRODUCTION 1
1-1 Background and Motivation 1
1-2 Organization of This Thesis 4
CHAPTER 2 NON-PLANAR MOS CAPACITOR 5
2-1 Silicon-on insulator (SOI) 5
2-2 Dielectric layer of MOS structure 6
2-3 Non-planar structure 7
2-3-1 Fin/ Double-gate structure 7
2-3-2 Multi-gate structure 8
2-4 Development of non-planar structure 9
CHAPTER 3 DEVICES FABRICATION 11
3-1 Hard Mask Design 11
3-2 Fabrication Process 12
3-3 Mesa isolation 14
3-3 Channel release (For Omega shape and GAA shape) 15
3-3-1 Etching window 15
3-3-2 Wet etching 16
3-4 Dielectric layer deposition 16
3-4-1 Radio Frequency (RF) Sputtering 16
3-4-2 Atomic Layer Deposition (ALD) 17
3-4-3 Ultrasonic Spray Pyrolysis Deposition (USPD) 19
3-5 Probe pad formation 21
3-5-1 Removal of Al2O3 form probe pad 21
3-5-2 Metal deposition 22
3-5-3 Rapid Thermal Annealing (RTA) 22
3-6 Gate Schottky contact formation 23
3-6-1 Gate pattern lithography 23
3-6-2 Metal deposition and lift-off 23
CHAPTER 4 RESULTS AND DISCUSSION 24
4-1 Materials Analysis 24
4-1-1 Transmission Electron Microscopy (TEM) 24
4-1-2 Atomic Force Microscopy (AFM) 29
4-1-3 Electron Spectroscopy for Chemical Analysis (ESCA) 32
4-2 Electrical Characteristics 35
4-2-1 Capacitance-Voltage Analysis 35
4-2-2 Current-Voltage Analysis 45
CHAPTER 5 CONCLUSION 50
References 51
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