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系統識別號 U0026-2408201716391200
論文名稱(中文) 微型化氮化鎵發光二極體光電特性之研究
論文名稱(英文) Investigation of Optoelectronic Properties for Nitride-Based Micro Light-Emitting Diodes
校院名稱 成功大學
系所名稱(中) 光電科學與工程學系
系所名稱(英) Department of Photonics
學年度 105
學期 2
出版年 106
研究生(中文) 鄭乃軒
研究生(英文) Nai-Hsuan Cheng
學號 L76041040
學位類別 碩士
語文別 中文
論文頁數 116頁
口試委員 指導教授-賴韋志
口試委員-許進恭
口試委員-郭政煌
中文關鍵字 微型化發光二極體  電流擴散效應  表面複合  微型化發光二極體陣列 
英文關鍵字 Micro LEDs  Current Spreading  Surface recombination  Micro LEDs Array 
學科別分類
中文摘要 由於一般發光二極體有電流聚集在電極附近的問題,尤在發光面積較大之元件更加顯著,而大電流的注入亦會使電流聚集在電極附近的情況更明顯,並且造成電流分佈不均。本論文藉由將發光二極體微型化,希望達到改善電流擁擠效應的目的。然而由於微型化發光二極體側壁對發光面積之比值較大,會有較強烈的表面複合效應,故我們亦探討表面複合效應對微型化發光二極體的影響。再者,由於發光二極體的微型化會伴隨部分應力釋放,以及增進電流擴散效果,影響光電特性表現,我們亦對此特性進行探討。在微型化發光二極體顯示技術上,將微型化發光二極體以陣列結構排列,進而達到每個單一元件可獨立控制的目的。本論以共n型氮化鎵層為核心概念,並在陣列之n型氮化鎵區域兩側皆鍍上電極,探討經由不同側之n型電極進行量測,陣列上每一單一元件其光電特性表現。
本論文首先製做了5種不同大小方形發光區之藍光與紫外光發光二極體,其邊長分別為100μm、80μm、60μm、40μm、20μm,並與邊長為300μm之傳統發光二極體進行比較,綜合光電特性之結果,隨著發光區的縮小,微型化發光二極體相較於傳統發光二極體皆改善了電流擁擠效應。而微型化發光二極體其目的終為將之應用於全彩顯示系統當中,故我們開發了以共n型氮化鎵為核心概念的可編址微型化發光二極體,但經過了一系列的製程改良後,始終無法克服將p型氮化鎵層串接之金屬線斷裂的問題,於是我們轉往探討條狀式微型化發光二極體陣列,並且經由從不同側之n型電極進行量測,探討其光電特性之表現。然而經過量測,藍光與紫外光條狀式發光二極體陣列呈現相同之趨勢。在電特性的表現上,隨著離n型電極之距離越遠,其起始電壓值越高,串聯電阻亦越高,並且經由不同側之n型電極進行量測,其電特性會呈現對稱的趨勢;在光特性的表現上,其光輸出功率與發光波長不隨離n型電極之距離遠近而有顯著變化,而經由不同側之n型電極進行量測相同位置之元件其光輸出功率與發光波長亦是相同。
英文摘要 In this study, we demonstrated blue and ultraviolet light emitting diodes (LEDs) with different micro-size mesa area. To sum up the result of optoelectronic properties, micro LEDs optimize the current spreading effect compared with the conventional LEDs. However, since the ratio of sidewall perimeter to mesa area for micro LEDs is larger, there would be a stronger surface recombination effect. We also demonstrated micro LEDs array with common n-type gallium nitride layer, and we deposited electrodes on both sides of common n-type gallium nitride layer. We found that in the part of eletronic properties, the farther the distance from the element to n-type electrode, the higher forward voltage is measured. Furthermore, it has symmetric characteristic through the measurement at different side of the n-type electrodes. In the part of optical properties, the light output power and the wavelength are independent of the distance from the element to n-type electrode. Additionally, the light output power and the wavelength are respectively the same through the measurement at different side of the n-type electrodes.
Key words: Micro LEDs; Current Spreading; Surface recombination; Micro LEDs Array

論文目次 目錄
摘要 i
致謝 vii
目錄 viii
表目錄 xiii
圖目錄 xvi
第一章 序論 1
1.1前言 1
1.2研究動機 1
第二章 理論基礎 3
2.1發光二極體原理 3
2.2載子複合機制 3
2.3量子侷限效應 4
2.4電流擁擠效應 5
第三章 微型化藍光發光二極體研製 6
3.1實驗動機 6
3.2實驗規劃 6
3.3藍光發光二極體 6
3.3.1藍光發光二極體結構 6
3.3.2藍光發光二極體製程 6
3.3.3藍光發光二極體光電特性 9
3.4微型化藍光發光二極體 10
3.4.1微型化藍光發光二極體結構 10
3.4.2微型化藍光發光二極體製程 10
3.4.3微型化藍光發光二極體電特性分析 13
3.4.4微型化藍光發光二極體發光頻譜分析 14
3.4.5微型化藍光發光二極體光特性分析 15
3.4.6微型化藍光發光二極體外部量子效率 17
3.4.7微型化藍光發光二極體光電特性綜合分析 18
第四章 微型化紫外光發光二極體研製 19
4.1實驗動機 19
4.2 實驗規劃 19
4.3 紫外光發光二極體 19
4.3.1紫外光發光二極體結構 19
4.3.2紫外光發光二極體製程 19
4.3.3紫外光發光二極體光電特性 22
4.4微型化紫外光發光二極體 23
4.4.1微型化紫外光發光二極體結構 23
4.4.2微型化紫外光發光二極體製程 23
4.4.3微型化紫外光發光二極體電特性分析 26
4.4.4微型化紫外光發光二極體發光頻譜分析 27
4.4.5微型化紫外光發光二極體光特性分析 28
4.4.6微型化紫外光發光二極體外部量子效率 29
4.4.7微型化紫外光發光二極體光電特性綜合分析 30
第五章 微型化發光二極體陣列研製 31
5.1實驗動機 31
5.2 實驗規劃 31
5.3 可編址微型化發光二極體陣列 31
5.3.1可編址微型化發光二極體陣列結構 31
5.3.2可編址微型化發光二極體陣列製程 31
5.3.3可編址微型化發光二極體陣列製程改良 37
5.4微型化條狀式發光二極體陣列 38
5.4.1微型化條狀式發光二極體陣列結構 38
5.4.2微型化條狀式發光二極體陣列製程 38
5.4.3微型化條狀式藍光發光二極體陣列電特性分析 42
5.4.4微型化條狀式藍光發光二極體陣列發光波長分析 43
5.4.5微型化條狀式藍光發光二極體陣列光特性分析 43
5.4.6微型化條狀式藍光發光二極體陣列外部量子效率 44
5.4.7微型化條狀式紫外光發光二極體陣列電特性分析 44
5.4.8微型化條狀式紫外光發光二極體陣列發光波長分析 45
5.4.9微型化條狀式紫外光發光二極體陣列光特性分析 46
5.4.10微型化條狀式紫外光發光二極體陣列外部量子效率 46
5.4.11微型化條狀式發光二極體陣列光電特性綜合分析 47
第六章 結論與未來展望 48
參考文獻 51
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