系統識別號 U0026-2207201516425600
論文名稱(中文) Sn1-xBixS與Sn1-xInxS液相合成,光學能隙和霍爾效應研究
論文名稱(英文) Solution-phase synthesis, optical bandgap, and Hall effect of Sn1-xBixS and Sn1-xInxS
校院名稱 成功大學
系所名稱(中) 材料科學及工程學系
系所名稱(英) Department of Materials Science and Engineering
學年度 103
學期 2
出版年 104
研究生(中文) 黃昱凱
研究生(英文) Yu-Kai Huang
學號 N56021315
學位類別 碩士
語文別 中文
論文頁數 95頁
口試委員 指導教授-林文台
中文關鍵字 摻雜Bi的SnS奈米晶  太陽能材料  電性  光學能隙 
英文關鍵字 Bi-doped SnS nanocrystals  solar energy materials  electrical properties  optical bandgap 
中文摘要 本研究以高壓釜在170℃合成摻雜Bi的單一SnS相奈米晶,並探討其電性及光學性質。Bi於SnS晶體中的固溶度約為6 at%。SnS在Bi濃度低於4 at%時仍為p型,當濃度達6 at%時便轉換為n型。隨著SnS中Bi摻雜濃度的上升,能隙值由1.30 eV增加至1.40 eV。目前的研究顯示,有潛力製造具能隙調控的SnS:Bi之p-n同質接面,使其應用在太陽能電池。Sn1-xInxS試片以高壓釜在190℃持溫24小時合成,XRD和TEM分析顯示In並不能進入SnS的晶格內,且有SnS及SnS2兩種相生成。
英文摘要 The electrical and optical properties of Bi-doped SnS nanocrystals with single phase synthesized in an autoclave at 170℃ were explored. The substitution solubility of Bi in SnS is about 6 at%. The samples with the Bi concentration below 4 at% remain p-type, while those with the Bi concentration at 6 at% convert to the n-type nature. The bandgap of Bi-doped SnS increases from 1.30 to 1.40 eV with increasing the Bi concentration from 0 to 6 at%. The present study reveals that it may be promising to fabricate the SnS/SnS:Bi p-n homojunction with the tunable bandgap for applications in solar cell devices. The Sn1-xInxS samples were synthesized in an autoclave at 190℃for 24 h. XRD and TEM analyses for the Sn1-xInxS samples showed that In can not incorporate into the SnS lattice and two phases, i.e., SnS and SnS2 are present.
論文目次 目錄
摘要 I
Extended Abstract II
目錄 IX
圖目錄 XI
第一章 引言 1
第二章 光電基礎理論與文獻回顧 3
2.1 基本光電原理 3
2.1.1 光傳導效應(Photoconductive effect) 3
2.1.2 光伏效應(Photovoltaic effect)[4] 3
2.2 太陽能材料介紹 4
2.2.1 太陽能材料物理特性需求 4
2.2.2 太陽能材料分類 4
2.3 可調控能隙材料 7
2.4 SnS奈米晶合成及特性 10
2.4.1 SnS之合成 10
2.4.2 SnS之特性 11
2.5 SnS藉由控制晶粒尺寸調控SnS能隙 11
2.6 藉由元素摻雜調控SnS能隙 13
2.7 研究動機 15
第三章 實驗步驟與方法 17
3.1 水熱法在高壓釜(autoclave)合成Sn1-xBixS粉末 17
3.2 水熱法在高壓釜(autoclave)合成Sn1-xInxS粉末 18
3.3 材料特性分析 18
3.3.1 X光繞射儀(X-ray Diffractometer)[59] 18
3.3.2 掃瞄式電子顯微鏡(Scanning Electron Microscope, SEM) [59.60] 20
3.3.3 穿透式電子顯微鏡(Transmission Electron Microscope) [59.60] 21
3.3.4 X光能量散佈分析儀(Energy Dispersive X-ray Spectrometer, EDS) [59] 23
3.3.5 紫外/可見光(UV-vis)光譜儀[61-64] 24
3.3.6 化學分析電子光譜儀(Electron Spectroscopy for Chemical Analysis,ESCA)[66] 25
3.3.7霍爾效應分析儀 (Hall Effect Analyzer ) 27
第四章 結果與討論 29
4.1 SnS與Sn1-xBixS奈米晶 29
4.1.1 水熱法在高壓釜(autoclave)製備 SnS及Sn1-xBixS奈米晶 29
4.1.2 SnS及Sn1-xBixS奈米晶之微結構 31
4.1.3 SnS及Sn1-xBixS奈米晶之光學能隙 32
4.1.4 SnS及Sn1-xBixS奈米晶之霍爾效應量測 33
4.2 SnS與Sn1-xInxS奈米晶 34
4.2.1 水熱法在高壓釜(autoclave)製備Sn1-xInxS奈米晶 34
4.2.2 Sn1-xInxS奈米晶之微結構 35
4.2.3 SnS及Sn1-xInxS奈米晶之光學能隙 36
4.2.4 SnS及Sn1-xInxS奈米晶之霍爾效應量測 37
第五章 結論 38
參考文獻 40
附錄 90
JCPDS Cards No. 00-039-0354 (SnS) 90
JCPDS Cards No. 00-065-2435 (Bi2S3) 91
JCPDS Cards No. 00-021-1231 (SnS2) 92
SnS(170℃、36hr) Hall Measurement,試片電流0.1mA 93
Sn0.96Bi0.04S (170℃、36hr) Hall Measurement,試片電流10uA 93
Sn0.92Bi0.08S (170℃、36hr) Hall Measurement,試片電流10uA 94
Sn0.88Bi0.12S (170℃、36hr) Hall Measurement,試片電流9uA 94
Sn0.94In0.06S (190℃、24hr) Hall Measurement,試片電流0.1mA 95
Sn0.88In0.12S (190℃、24hr) Hall Measurement,試片電流0.1mA 95
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