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系統識別號 U0026-2206201611515800
論文名稱(中文) 提升快閃記憶體即時寫入效能的機制
論文名稱(英文) A Two Mode GC to Improve NAND Flash Real-time Writing Performance.
校院名稱 成功大學
系所名稱(中) 製造資訊與系統研究所
系所名稱(英) Institue of Manufacturing Information and Systems
學年度 104
學期 2
出版年 105
研究生(中文) 周立旻
研究生(英文) Li-Min Chou
學號 P96024095
學位類別 碩士
語文別 中文
論文頁數 30頁
口試委員 指導教授-蔡佩璇
口試委員-謝孫源
口試委員-張大緯
口試委員-蔡孟勳
口試委員-張原豪
中文關鍵字 快閃記憶體  記憶體回收  即時系統 
英文關鍵字 NAND flash  garbage collection  real-time system 
學科別分類
中文摘要 NAND flash (快閃記憶體) 在空間不夠寫入的情況下會利用garbage collection的機制來回收free page。然而,garbage collection發生的時機無法被預估而且會延長task的response time (回應時間)。 在即時系統中,為了確保task不會miss deadline,一個task的maximum response time被估計為task 及garbage collection的執行時間總和,而這時間總和被稱為worst case response time。 過去許多研究都專注於尋找worst case response time的最佳解去降低response time的 jitter (振盪),藉以改善NAND flash的讀寫效能。
在本篇論文中,我們提出two-mode GC的機制,讓scheduler得知有哪些write request將被garbage collection所延遲,使得scheduler能夠有更精準的排程以達到提升NAND flash的即時寫入效能,在模擬實驗中,在與先前方法所測得的average access time(平均存取時間)相近的情況下,two-mode GC可以擁有較好的排程來增加NAND flash的寫入效能。
英文摘要 The garbage collection (GC) mechanism in NAND flash reclaims free pages based on erasing blocks as a unit and causes delay of response time. Hence, the response time of a task is estimated as the worst case response time which is coupled with task execution time and GC time to avoid missing deadline in real-time system. Many studies focused on finding the optimal worst case response time to improve NAND flash performance. In this paper, we propose a two-mode GC mechanism which separates NAND flash to two modes: normal mode and gc mode. We also give conditions to switch modes and prove the conditions are optimal. In the simulation results, the average access time of two-mode GC is closed to WAO-GC, and two-mode GC can let scheduler know which write request would delay by garbage collection. So that, the schedule is more accurate, and the writing performance of NAND flash is raised.
論文目次 第一章 緒論 1
第二章 文獻回顧 5
2.1 快閃記憶體轉換層 5
2.1.1快閃記憶體轉換層介紹 5
2.1.2快閃記憶體轉換層之相關研究 10
2.2 Garbage collection 11
2.2.1 Garbage collection執行時機 11
2.2.2 挑選victim block 12
2.2.3 worst case response time評估 12
第三章 TWO-MODE GC 15
3.1 two-mode GC範例 15
3.2 two-mode GC相關證明 18
第四章 模擬實驗 20
4.1 實驗環境 20
4.2 實驗結果 21
第五章 總結 28
參考文獻 29
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[14] Siddharth Choudhuri, Tony Givargis, “Deterministic Service Guarantees for NAND Flash Using Partial Block Cleaning,” in Proc. 6th IEEE ACM Int. Conf. Hardw./Softw. Codesign Syst. Synth., GA, USA, October 2008, pp. 19-24
[15] Zhiwei Qin, Yi Wang, Duo Liu, Zili Shao,” Real-Time Flash Translation Layer for NAND Flash Memory Storage Systems,” Real-Time and Embedded Technology and Applications Symposium (RTAS), 16-19 April 2012, pp. 35 – 44
[16] Qi Zhang, Xuandong Li, Linzhang Wang, Tian Zhang, Yi Wang and Zili Shao, ”Optimizing Deterministic Garbage Collection in NAND Flash Storage Systems,” real-time and embedded technology and applications symposium, 13-16 April 2015, pp. 14-23
[17] “Samsung electronics.samsung K9K8G08U0B(v0.1)-8GB SLC NAND flash data sheet”, July 2008.
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