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系統識別號 U0026-2108201202001000
論文名稱(中文) 利用分子束磊晶系統研究氮化鉻奈米島對不同基板上之氮化物半導體其特性與性質
論文名稱(英文) Growth and properties of III-nitride materials on different substrates with CrN nano-island by Molecular Beam Epitaxy
校院名稱 成功大學
系所名稱(中) 光電科學與工程學系
系所名稱(英) Department of Photonics
學年度 100
學期 2
出版年 101
研究生(中文) 劉廣惟
研究生(英文) Kuang-Wei Liu
學號 l78951136
學位類別 博士
語文別 英文
論文頁數 133頁
口試委員 指導教授-張守進
共同指導教授-林建德
口試委員-簡奉任
口試委員-林詣超
口試委員-賴韋志
口試委員-許進恭
口試委員-劉全璞
召集委員-姬梁文
口試委員-閔庭輝
中文關鍵字 分子束磊晶  三族氮化物  氮化鎵  氮化銦奈米柱  氮化鉻 
英文關鍵字 MBE  III-nitride  GaN  InN  CrN 
學科別分類
中文摘要 本論文探討利用分子束磊晶系統成長氮化物半導體(III-nitride semiconductor)時於基板與磊晶層中間插入氮化鉻(CrN)之後對其光電特性之研究。利用掃描式電子顯微鏡(SEM)觀察磊晶層表面與奈米結構的表面型態,利用穿透式電子顯微鏡(TEM)探討氮化鉻對磊晶時缺陷分布以及奈米結構形成機制,並利用光激發螢光發光譜(PL)進行光學性質之分析,且利用HR-XRD確定試片的成長方向以及晶性。
本論文可分為三大部分,首先,探討利用分子束磊晶系統在矽基板上(Silicon substrate)上成長氮化鎵,並且插入氮化鉻來改善氮化鎵之磊晶層品質,由SEM表面分析以及PL光譜的改善,我們可以發現藉由插入氮化鉻,確實對於成長氮化鎵磊晶層有相當大的幫助。
第二部份則是以分子束磊晶系統成長半極性(semi-polar)氮化鎵在m-plane的藍寶石基板上,藉由SEM表面分析、HR-XRD以及低溫PL的分析以及趨勢,我們可以發現,插入氮化鉻之後的半極性氮化鎵表面會變的比較平整,且由PL的趨勢,可以發現由於堆疊錯誤(stacking fault)產生的復合發光,同時會被抑制,且發光強度也會增加十倍。
第三部份則是在矽基板上成長氮化銦的奈米柱,藉由插入不同厚度的氮化鉻,我們發現氮化銦奈米柱的品質、密度以及外型都會有相當大的不同,藉由TEM的分析結果,我們可獲得些許的證據來推論氮化銦奈米柱的成長機制。
英文摘要 This dissertation investigated the microstructure and physical properties of III-nitride semi-conductor materials grown by plasma-assisted molecular beam epitaxy (MBE) with CrN interlayer. The surface morphologies of the samples were analyzed by scanning electron microscopy (SEM). The microstructures of the samples were characterized by transmission electron microscopy (TEM) to examine the formation mechanism of the III-nitride semi-conductor materials. The optical properties of the samples were investigated by combining low-temperature photoluminescence (PL) and temperature dependent-PL. The film quality and growth direction were confirmed by HR-XRD.
The main focus of this dissertation can be dividing into three parts. First, the characteristics of GaN grown on Si substrate with CrN interlayer by MBE system, the surface morphologies and PL spectra of GaN with/without CrN interlayer indicated that the quality of GaN epilayer were improved distinctly, the mechanism of dislocation eliminated was confirmed by TEM result.
The second part, the characteristics of semi-polar GaN grown on m-plane sapphire with CrN interlayer, the morphology and HR-XRD result indicated that the dislocation of semi-polar GaN was reduced by inserted the CrN interlayer, temperature dependent PL spectra showed the transition of stacking fault was eliminated and room-temperature PL spectra intensity was higher than semi-polar GaN without CrN interlayer.
In the third part, the characteristics of InN nanorods grown on Si substrate with CrN interlayer, the InN nanorods density, quality and shape were influenced by various thicknesses of CrN interlayer. As the TEM result, the InN nanorods growth mechanism was speculated.
Key word: MBE, III-nitride, GaN, InN, CrN.
論文目次 Content
Abstract (in Chinese) …………………………………………………… I
Abdtrsct (in English)……………………………………………………III
Acknowledgement..…………………………….………………………..V
Content…………………………………………………………………VII
Table caption……………………………………………………………..X
Figure caption……………………………………...…………………....XI

Chapter 1 introduction 1
1-1 Background 1
1-2 Motivation and Organization of this thesis 4
Chapter 2 Fabrication and Measurement Apparatus 6
2-1 Radio-frequency Plasma-assisted Molecular beam epitaxy (PA-MBE) 6
2-2 RF Sputtering system 9
2-3 Scanning Electron Microscope (SEM) 12
2-4 X-ray diffraction system (XRD) 13
2-5 Photoluminescence (PL) System 15
2-6 Atomic force microscopy (AFM) 18
2-7 Transmission Electron Microscopy (TEM) 19
Chapter 3 Growth and properties of III-nitride materials on different substrates with CrN nano-island by Molecular Beam Epitaxy 21
3-1 The study of GaN grown on Si substrate with the CrN nanoisland inserted 21
3-1-1 Motivation 21
3-1-2 Substrate preparation 21
3-1-3 Fabrication process 22
3-1-4 Result and discussion 23
3-1-5 Summary 34
3-2 Improvement of crystal quality and optical properties of (11 2) GaN on (10 0) m-plane sapphire substrate with a CrN interlayer using molecular beam epitaxy 36
3-2-1 Motivation 36
3-2-2 Substrate preparation 37
3-2-3 Fabrication Process 38
3-2-4 Result and discussion. 40
3-2-5 Summary 65
3-3: Growth of InN Nanorods Prepared by Plasma-Assisted Molecular Beam Epitaxy with Varying Cr Thicknesses. 68
3-3-1 Motivation 68
3-3-2 Sample preparation 70
3-3-3 Morphology of InN Nanorods 73
3-3-4 Surface Morphology of Buffer Layers 85
3-3-5 Crystalline Characteristics 90
3-3-6 InN Nanorods with Multiple Buffer Layers 94
3-3-7 Morphology of InN Nanorods 95
3-3-8 Surface Morphology of Buffer Layers 103
3-3-9 Crystalline Characteristics 109
3-3-10 HRTEM Analysis 114
3-3-11 Growth Mechanism 117
3-3-12 Summary 121
Chapter 4 Conclusion 123
Chapter 5 Future work 125
Reference 126
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