系統識別號 U0026-2107201418332300
論文名稱(中文) 量子點敏化光電極在太陽能轉換之應用-評論與應用實例
論文名稱(英文) Quantum Dot-Sensitized Photoelectrodes for Solar Energy Conversion: Review and Application Examples
校院名稱 成功大學
系所名稱(中) 化學工程學系
系所名稱(英) Department of Chemical Engineering
學年度 102
學期 2
出版年 103
研究生(中文) 林耀加
研究生(英文) Yao-Chia Lin
學號 N36014097
學位類別 碩士
語文別 英文
論文頁數 158頁
口試委員 指導教授-鄧熙聖
中文關鍵字 量子點光電極光電轉換元件探討  硫/硒化鎘量子點  敏化太陽能電池 
英文關鍵字 review of QD-based optoelectronic devices  CdSxSe1-x QDs  sensitized solar cell 
中文摘要 全球能源危機所帶來對於乾淨的綠能需求目前已成了全世界最重要的一個課題,而以光伏或光電化學反應來將太陽光轉換為電力,亦即太陽能發電,也漸漸地被投入開發。從第一代及第二代太陽能電池蓬勃發展之後,以單晶矽或多晶矽等薄膜所形成之太陽能電池已經廣泛應用在太陽能電池的商業市場上,但因為其普遍成本偏高、且對於其製程的要求也非常嚴格,因此這類型為主的太陽能電池尚未能作為供應能源的取代。隨著第三代太陽能電池的發展,除了以染料分子之外,應用量子點半導體材料作為吸光敏化劑也成了目前最具潛力吸光材料。
Quantum dot (QD) sensitized photoelectrodes have attracted great interest in the past few years. They are greatly applied not only in quantum dot sensitized solar cells but also in colloidal quantum dot thin film solar cells and photoelectrochemical (PEC) cells for water splitting. The properties such as multiple exciton generation (MEG), hot electron injection and tunable band gap are gaining momentum to overcome the efficiency limitations. Although a starting point of relatively low performing optoelectronic device, the breakthrough of QDs-based device has been witnessed for boosting conversion efficiency in just a few years. In this review, we highlight the recent evolvements achieved in surmounting the obstacles such as lower open circuit voltage (Voc) or charge recombination. With the specific investigation and innovation for main structures constructing the QDs-based devices, we anticipate the future direction with an aim to highly light to electric power conversion efficiency. And finally, we used the Cd2+ seed pre-treatment to enhance the loading of CdSxSe1-x to increase the overall power conversion efficiency to 5.3%.

Key words: review of QD-based optoelectronic devices, CdSxSe1-x QDs, sensitized solar cell


In this brief review and article, we aim to focus on the utilization of QD-photoelectrodes in PV and PEC devices, QDSSCs, CQDs thin film solar cells and water splitting. The basic opto-electronic characteristics and mechanisms of QDs-based devices will be discussed at first. After the explicit definition and consideration, we will be absorbed in the progress on the study of these interesting and promising photoelectrodes, further to more discussion
about each part of the device structures. The literature for optimizing and engineering for QDs-based device is quite large, so we do not to cover the researches exhaustively. Finally, the pivotal path to improve the performance of QDs-based devices and the stability of QDs itself will be discussed in detail.


In this section, we focus on the working principle for PV and PEC devices, including QDSSCs, CQDSCs and QDs-based photoelectrode for PEC water splitting. With the promisingly optoelectronic properties in QD such as ionization impact, Auger recombination and mini-band transfer, QD materials show the potential to apply in the sensitizer in many QDs-based devices.


Much attention has been drawn to the development for the QDs-based PV or PEC devices. The intensive researches are concentrated on each formation of the optoelectronic devices to improve the sun-light conversion efficiency, lying primarily to the wide band gap metal oxides, QDs sensitizers, electrolytes and counter electrodes. The following investigation mainly about QDSSCs, CQDSCs and QDs-based water splitting highlights the composed structure with an aim toward highly efficient sunlight energy conversion.

At the heart of the photoelectrode is always a nanocrystalline metal oxide film. It plays a significant role to load QDs sensitizers and conduct electrons. As a wide band gap semiconductor for the QDs scaffold, the large surface area is available for QDs adsorption. Therefore, nanosized porous structure has been commonly used in QDs-based PV or PEC devices, primarily consisting of TiO2 or ZnO. Nanoparticle films offer very high surface area to extend the amount of sensitizer loading. However, unlike dye adsorption in DSSCs, larger QDs have some difficulty entering the inner pores the film. The direct exposure of the oxide film in electrolyte leads to a series degree of interfacial recombination, deteriorating the Voc. Thus, selecting a proper candidate to adsorb QDs is an important issue.


There are many kinds of QDs semiconductors applying to the sensitizers on the wide band gap metal oxides. They play important roles for light absorption, charge excitation and separation. QDs semiconductors especially such as CdS, CdSe, PbS, CuInS2, Sb2S3 and their alloys with other elements have been commonly investigated for pursuit of higher power conversion efficiency. Besides the stability when immersing in electrolyte, QDs sensitizers should completely cover on all the surface of the metal oxide avoiding direct contact between metal oxide and electrolyte. Thus, the most used methods are based on increasing the coverage of QDs. All methods are mainly classified into in-situ and ex-situ ones from QDs synthesis and their incorporation into the photoactive electrode. Recently, some improvements for the doping QDs, surface treatment and combination of organic dye absorbers have become the latest trend in QD-based optoelectronic devices.


In QDSSCs, the electrolyte plays a pivotal role in the rejuvenation of QDs materials by capturing the photo-generated holes. The rapid electron-transfer from electrolyte to the oxidized QDs sensitizer must be indispensable in the whole charge transfer process while having excellent long-term stability. Further, the important process includes the self-redox in the couple to deliver the hole to counter electrode. What must be significantly addressed is the Voc influenced by the potential of the redox couple. This value is corresponded to the difference between the quasi-Fermi level of metal oxide and the redox potential of the electrolyte.

Counter Electrode

In addition to the investigation of photoanodes, the performance of the QDSSCs is determined by the electrocatalytic properties and tolerance of the CEs toward the redox couples. The CE is responsible for catalysis and reduction of the oxidized redox species with the electrons transporting from the external circuit. For the polysulfide used widely in liquid state QDSSCs, besides discharging the electrons quickly, the CE must sustain in the sulfur/sulfide aqueous surrounding for a long time in pursuit of the long-term stability. Finally, the amount of the CE catalytic activity and surface area is also a crucial parameter that affects the overall performance.


Although a volume of work has been conducted on the analysis of each element assembling QDs-based PV or PEC cells to enhance the sun-light conversion efficiency, there is still an obvious gap between QDSSCs and DSSCs. It is imperative that the efficiency of QDSSCs should be ~10% to make them competitive. In recent years, the efficiency has been gradually achieved to 5~7% in average for high efficiency device no matter for QDSSCs or for CQDs thin film solar cells. Accordingly, strategies for improve the performance are discussed as follow to bring the great potential of fabricating a highly efficient QD-based devices.


For the result and discussion, we apply the Cd2+ seed pre-treatment before SILAR process. And we observed that the cells with Cd2+ pre-treatment showed higher photocurrent, which leads the improved PCE of 5.3%. And the electrolyte condition was based on the based one with the larger alkali compound to increase the conductivity. However, the performance in solid state with CdSxSe1-x QDSSC was not as well as expected, just only 0.4%.


QDs-based photo-electrodes have emerged as the representative not only for the third generation PV devices but also for the water splitting in PEC systems. Owing to the optoelectronic properties such as multiple exciton generation (MEG), size-dependent band gap and high extinction coefficient, QDs have been the appropriate substitution for dye molecules as the photo-induced sensitizer. The QDSSCs are composed of electron acceptor, QD-sensitizer and hole acceptor which approaches to the assembly of p-i-n junction. With optimization for each element, the overall conversion efficiency has closed to 7% and have the potential to achieve 10%.
論文目次 中文摘要....................................................I
Extended Abstract........................................III
Table Catalogue..........................................XII
Figure Catalogue........................................XIII

Chapter 1 Introduction.....................................1
Chapter 2 Principles and Mechanisms for QDs-Based Devices..7
2-1 Performance Parameters for PV Solar Cell.......7
2-2 Performance Parameters for PEC Water
2-3 QDs as Sensitizers............................16
2-4 Working Mechanisms of QDs-Based Photoelectrodes
in PV and PEC Devices.........................19
2-4.1 QD Sensitized Solar Cells (QDSSCs)..19
2-4.2 Colloidal Quantum Dots (CQDs) Thin
Film Solar Cells....................23
2-4.3 QDs-Photoelectrodes Water Splitting
for Hydrogen Generation.............26
Chapter 3 Process of Component Structures in QDs-Based Devices...................................................29
3-1 Metal Oxide for Wide Band Gap Semiconductors
(Electron Acceptors)..........................29
3-1.1 Titanium Oxide (TiO2)...............30
3-1.2 Zinc Oxide (ZnO)....................35
3-1.3 Other Oxides........................39
3-1.4 Doping for Metal Oxides.............40
3-2 QDs-Sensitizers...............................43
3-2.1 Preparation and Deposition Methods
for QDs.............................56
3-2.2 Types of QDs-Materials..............70
3-2.3 Some Improvements for QDs...........82
3-3 Redox Electrolytes............................85
3-4 Counter Electrodes (CEs)......................91
Chapter 4 Strategies to Optimize the QDs-Based Devices....96
4-1 Highly-Loading Coverage of QDs on Electron
Conductor (Metal Oxide........................96
4-2 QDs Material Selection and Engineering........99
4-3 Enhanced Depletion Region for Efficient Charge
4-4 Stable Electrolyte with Lower Redox
4-5 Highly-Catalytic Counter Electrode...........103
Chapter 5 Instruments and Experimental Methods...........104
5-1 Experimental Chemicals.......................104
5-2 Experimental Instruments.....................106
5-3 Experimental Methods for QDSSCs Fabrication..107
5-3.1 Preparation of TiO2 Nano-Particle
5-3.2 Preparation of TiO2/CdSxSe1-x
5-3.3 Preparation of PbS Counter
5-3.4 Assembly of Liquid State CdSxSe1-x
5-3.5 Assembly of Solid State CdSxSe1-x
Chapter 6 Results and Discussion.........................112
6-1 The Influence of Additive in Polysulfide
6-1.1 Introduction.......................112
6-1.2 Photovolaic Performance for the
6-2 The Effect of Cd2+ Pre-treatment before
6-2.1 Introduction.......................115
6-2.2 Photovolaic Performance for the
Comparison with Cd2+ Pre-treatment.116
6-3 Solid State CdSxSe1-x-Based QDSSCs...........118
6-3.1 Introduction.......................118
6-3.2 Photovolaic Performance for the Solid
State QDSSCs.......................119
Chapter 7 Conclusion and Outlook.........................121
Chapter 8 Reference......................................123

Table Catalogue
Table 3-1 Performance summary of QDSSCs reported in recent
Table 3-2 Performance summary of CQDs thin film solar cells
reported in recent literature...................53
Table 3-3 Performance summary of QDs-based PEC cells for
water spitting reported in recent literature....54
Table 6-1 Photovoltaic parameters for different assembly of
polysulfide electrolyte based on CdSxSe1-x/ZnS
liquid QDSSCs..................................114
Table 6-2 Photovoltaic parameters for CdSxSe1-x/ZnS liquid
QDSSCs with and without the Cd2+ pre-treatment.117
Table 6-3 Photovoltaic parameters for CdSxSe1-x/ZnS solid
state QDSSCs...................................120

Figure Catalogue
Fig. 2-1 I-V curves in the fourth of a photovoltaic solar
cell depicted under illumination and dark
Fig. 2-2 Principles of water splitting using semiconductor
photocatalysts or photoelectrodes................14
Fig. 2-3 Dependence of theoretical STH and solar
photocurrent density of photoelectrodes on their
bandgap absorption edge..........................15
Fig. 2-4 Optoelectronic properties for QDs material from (a)
Fig. 2-5 Work mechanism of quantum dot sensitized solar
cell with mesoporous metal oxide under sunlight
Fig. 2-6 Structures and mechanisms for (a) Schottky solar
cells and (b) depleted heterojunction solar cells
Fig. 2-7 Work mechanism of water splitting PEC cells with
QDs-based photoelectrodes........................28
Fig. 3-1 The evolution of the sensitized solar cell.......33
Fig. 3-2 Photoinduced charge separation and transport in
(a) TiO2 particulate film and (b) TiO2 nanotube
Fig. 3-3 (a)Top view SEM image of surface textured-titaium
inversed opal. (b) the surface of io-TiO2 (scale
bar: 5 μm........................................34
Fig. 3-4 (a) Schematic and (b) energy band diagram of
planar DH solar ce (c) schematic and (d) energy
band diagram an ordered bulk heterojunction (BHJ)
architecture by the solution processed ZnO
Fig. 3-5 Schematic electronic band structure of CdSe
nanocrystalline TiO2/N, associated with normal
TiO2 and a N dopant state........................42
Fig. 3-6 The influence with the N-doped metal oxide for
reduction of the surface state induced at the
interface (a)with the N-doping (b)without any
Fig. 3-7 The illumination of the SILAR deposition of QDs
with PbS to be example...........................60
Fig. 3-8 Schematic diagrams of (a) the surface charge of
TiO2 as a function of solution pH and (b) the
deposition processes of CdS QDs on TiO2 films
using Cd(NO3)2 and Cd(Ac)2 methanol solutions as
cationic precursors. And (c)it shows fast
deposition during the SILAR process and have more
outstanding results with Cd(Ac)2.................61
Fig. 3-9 The existing problem caused by the in-situ method
with SILAR for CdS or CBD for CdSe...............61
Fig. 3-10 (a) Linking CdSe QDs to TiO2 particle with
bifunctional surface modifier like MPA, TGA; (b)
Light harvesting assembly composed of TiO2 film
functionalized with CdSe QDs on optically
transparent electrode...........................64
Fig. 3-11 Comparison of linker exchange of larger molecule
like OA and TOPO to smaller one like MPA........65
Fig. 3-12 (a) Schematic illustration of proposed band
bending in ZnO/PbS-TBAI (left) and ZnO/PbS-
TBAI/PbS-EDT (right) devices at short-circuit
conditions. (b) The much higher efficiency
conducted with the combination of ZnO/PbS-
Fig. 3-13 (a) Various heterostructure band alignments. (b)
The energy band alignments of the assembly with
CdS, CdSe and CdS/CdSe. (c) Inverted type I band
structure from CdS/CdSe core/shell structure....74
Fig. 3-14 (a) Cartoon of a core/shell CdTe/CdSe QD
indicating the relative position of the bands.
(b) The I-V curve with much higher efficiency of
6.76% for this CdTe/CdSe core/shell structure...75
Fig. 3-15 (a) Structure and (b) energy level alignment for
CdS/PbS depleted heterojunction solar cells. Also
the promising combination of Bi2S3/PbS has
represented in the depleted heterojunction solar
cell, which shows their (c) structure and (d)
energy level alignment..........................79
Fig. 3-16 (a) Schematic diagram illustrating the electron
transfer from doped CdS into TiO2 nanoparticles
with the additional energy state by d-d
transition from Mn-doping trap (b) I-V curve
indicating the substantially improvement with the
Mn-doping with Mn-CdS alone or Mn-CdS/CdSe......84
Fig. 3-17 A comparison of the cation effect with (a) the
smaller cation like Li+ and (b) the larger one
like Cs+ as the additive in the electrolyte.....90
Fig. 3-18 The energy band alignment for TiO2/Sb2S3 and many
kinds of organic hole transport materials.......90
Fig. 3-19 (a) The depict of the structure for 2-D reduced-
graphene counter electrode applied with Cu2S. (b)
Illustration showing the much faster catalytic
effect with polysulfide with Pt counter
Fig. 3-20 Schematic energy band diagram and charge transfer
processes in the QDSSC with PbS counter
Fig. 4-1 The representation of the novel deposition by
painting with the mix of metal oxide and QDs.....98
Fig. 5-1 Illustration of the overall procedures for
assembling a CdSxSe1-x QDSSCs with working
electrode and counter electrode.................111
Fig. 5-2 Schematic representation of a typical assembly of
a solid-state dye-sensitized solar cell.........111
Fig. 6-1 I-V curves for the comparison of different
assembly of polysulfide electrolyte based on
CdSxSe1-x/ZnS liquid QDSSCs.....................114
Fig. 6-2 UV-vis spectrum for the comparison of the
CdSxSe1-x/ZnS photoelectrode with and without the
Cd2+ treatment..................................116
Fig. 6-3 I-V curves for the comparison CdSxSe1-x/ZnS liquid
QDSSCs with and without the Cd2+ pre-treatment and
also for different concentrations...............117
Fig. 6-4 I-V curves for the CdSxSe1-x/ZnS solid state ETA
solar cell......................................120
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