||Hot Carrier Reliability Model and its Applicable Range of High Voltage MOSFET for Different Lightly Doped Drain Doping Concentration
||Institute of Microelectronics
在本論文中，我們使用N型通道高壓金氧半場效電晶體 (HV-MOSFET) 來探討不同輕摻雜汲極 (Lightly Doped Drain) 濃度元件之可靠度並建立生命週期之模型。
In this thesis, we study the N-type high voltage metal-oxide–semiconductor field-effect transistor (HV-MOSFET) with different Lightly Doped Drain (LDD) doping concentrations to investigate the reliability and establish the lifetime prediction model.
First, the motivation of the thesis is described. The application and the advantages of HV-MOSFET are also illustrated. Because the HV device is designed to endure high voltage from the power supply, the hot-carrier reliability and devices’ lifetime are important issues to be considered. In addition, technology computer-aided design (TCAD) simulation plays an essential role in our experiment. We will introduce these topics in detail. After the introduction, the structure of the devices and the definition of the internal region are presented. We also describe the measurement setup and methodology including device current (ID-VG, ID-VD), substrate current (ISUB-VG), and the calibration of TCAD tool.
Furthermore, the previous work has been shown that long-termed degradation can be obtained from short-time stress. For the degradation characteristics, all degradation curves are at a similar slope. Therefore, the degradation trend can form a general degradation curve by shifting along the time axis which means that multiplying a factor named “Scaling factor” to the time coordinate. Moreover, there is some relationship between scaling factor and device lifetime, and it had been proved under the usual N-type MOSFET. As a result, we apply the concept to the N-HVMOS with different LDD doping concentrations to derive the lifetime equation and present a model based on the terminal characteristic (IS, VG and VD).
During the period of establishing the model, our model is not available for all operation region. Therefore, we use TCAD to simulation the internal variation and assume how the degradation mechanism would be changed.
Finally, we analyze the devices’ electrical characteristics with different LDD doping concentrations and explain why the device with lower NDD dosage would suffer more influence from the drain to gate voltage which would aggravate the degradation and shorten the lifetime with TCAD simulation.
Table Captions IX
Figure Captions X
Chapter 1 Introduction 1
1-1 Motivation of the Thesis 1
1-2 Introduction of High Voltage MOSFETs 2
1-3 Introduction of Hot Carrier Reliability 3
1-4 Introduction of Scaling Factor 4
1-5 Introduction of Time Equation Prediction 5
1-6 Introduction of Lightly Doped Drain (LDD) 7
1-7 Introduction of Technology Computer Aid Design 7
1-8 About the Thesis 9
Chapter 2 Device Description and Measurement Setup 17
2-1 Introduction 17
2-2 Device Structure Description 17
2-3 Measurement Methodology 18
2-3-1 Measurement Setup 18
2-3-2 ID-VG Measurement 18
2-3-3 ID-VD Measurement 19
2-3-4 ISUB-VG Measurement 20
2-3-5 Simulation Setup 21
2-4 Summary 22
Chapter 3 On-state Degradation of Hot Carrier Stress and Model of Device Lifetime 33
3-1 Introduction 33
3-2 Experiment Setup and Stress Condition 34
3-3 Hot Carrier Degradation of On-state Conditions 35
3-4 Scaling Factor of On-state Degradation 37
3-5 Discussion of Degradation at Low Gate Voltage 38
3-6 Discussion of Degradation at High Gate Voltage 41
3-7 Lifetime Model of On-state Condition 43
3-8 Definition of Available Region in Scaling Factor Model 44
3-9 Summary 45
Chapter 4 Analysis of Device Lifetime Model under different LDD Doping Concentration 68
4-1 Introduction 68
4-2 Experiment and Analysis of Hot Carrier Stress under Various LDD Concentration 69
4-3 Lifetime Model of Different LDD Doping Concentrations 70
4-4 Discussion of Characteristics under Various LDD Concentrations 71
4-5 Summary 74
Chapter 5 Conclusion and Future Work 104
5-1 Conclusion 104
5-2 Future Work 106
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