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系統識別號 U0026-2007202014563400
論文名稱(中文) 相異輕摻雜區濃度之高壓金氧半場效電晶體其熱載子可靠度模型與適用範圍之研究
論文名稱(英文) Hot Carrier Reliability Model and its Applicable Range of High Voltage MOSFET for Different Lightly Doped Drain Doping Concentration
校院名稱 成功大學
系所名稱(中) 微電子工程研究所
系所名稱(英) Institute of Microelectronics
學年度 108
學期 2
出版年 109
研究生(中文) 陳怡婷
研究生(英文) I-Ting Chen
學號 Q16074126
學位類別 碩士
語文別 英文
論文頁數 115頁
口試委員 指導教授-陳志方
口試委員-張守進
口試委員-邱裕中
口試委員-陳世志
口試委員-張勝博
中文關鍵字 高壓金氧半場效電晶體  比例係數  輕摻雜汲極  熱載子導致之退化  電腦輔助設計模擬 
英文關鍵字 HV-MOSFET  scaling factor  LDD  hot-carrier-induced degradation  TCAD simulation 
學科別分類
中文摘要 在本論文中,我們使用N型通道高壓金氧半場效電晶體 (HV-MOSFET) 來探討不同輕摻雜汲極 (Lightly Doped Drain) 濃度元件之可靠度並建立生命週期之模型。
首先,描述本論文的研究動機並針對高壓金氧半場效電晶體元件在現今生活中的應用與其優點特色作簡介。由於元件會操作在高電壓的環境,因此熱載子可靠度及其生命週期為相當重要的議題,此外,電腦輔助設計(TCAD)模擬在我們的實驗過程扮演著重要的角色,在本論文開頭會針對各個面向作深入的介紹。基礎介紹之後,將會呈現此研究的元件結構與定義其元件內部區域並且陳述元件的量測設定與方法,其中包含:元件電流ID-VG、ID-VD、基板電流ISUB-VG之量測以及TCAD模擬之校準。
再者,在前人的研究當中指出,長時間的退化特性可以由短時間的加速測試而得到,由於得到的退化曲線有著類似的趨勢,因此可以藉由平移來重疊各曲線並形成通用退化曲線,此平移之倍率我們稱為比例係數(Scaling Factor)。又比例係數對於元件壽命有著密切的關係,此一概念已在一般N型金屬氧化物半導體中得到證實,我們將此觀念應用至不同輕摻雜汲極濃度之高壓金氧半場效電晶體並從中獲得其生命週期關係式並提出基於元件各端點特性電流的模型。
在建立模型的同時,並不是所有操作條件都能夠套用進同一個關係式裡,因此我們藉由TCAD模擬來觀察其內部變化,進而推測元件退化機制將會如何被影響。
最後,我們分析不同輕摻雜汲極濃度元件之特性並藉由TCAD模擬來解釋為何較低輕摻雜汲極濃度之元件會更容易受到端點電壓影響,而導致較短的生命週期。
英文摘要 In this thesis, we study the N-type high voltage metal-oxide–semiconductor field-effect transistor (HV-MOSFET) with different Lightly Doped Drain (LDD) doping concentrations to investigate the reliability and establish the lifetime prediction model.
First, the motivation of the thesis is described. The application and the advantages of HV-MOSFET are also illustrated. Because the HV device is designed to endure high voltage from the power supply, the hot-carrier reliability and devices’ lifetime are important issues to be considered. In addition, technology computer-aided design (TCAD) simulation plays an essential role in our experiment. We will introduce these topics in detail. After the introduction, the structure of the devices and the definition of the internal region are presented. We also describe the measurement setup and methodology including device current (ID-VG, ID-VD), substrate current (ISUB-VG), and the calibration of TCAD tool.
Furthermore, the previous work has been shown that long-termed degradation can be obtained from short-time stress. For the degradation characteristics, all degradation curves are at a similar slope. Therefore, the degradation trend can form a general degradation curve by shifting along the time axis which means that multiplying a factor named “Scaling factor” to the time coordinate. Moreover, there is some relationship between scaling factor and device lifetime, and it had been proved under the usual N-type MOSFET. As a result, we apply the concept to the N-HVMOS with different LDD doping concentrations to derive the lifetime equation and present a model based on the terminal characteristic (IS, VG and VD).
During the period of establishing the model, our model is not available for all operation region. Therefore, we use TCAD to simulation the internal variation and assume how the degradation mechanism would be changed.
Finally, we analyze the devices’ electrical characteristics with different LDD doping concentrations and explain why the device with lower NDD dosage would suffer more influence from the drain to gate voltage which would aggravate the degradation and shorten the lifetime with TCAD simulation.
論文目次 摘要 I
Abstract III
致謝 V
Content VI
Table Captions IX
Figure Captions X
Chapter 1 Introduction 1
1-1 Motivation of the Thesis 1
1-2 Introduction of High Voltage MOSFETs 2
1-3 Introduction of Hot Carrier Reliability 3
1-4 Introduction of Scaling Factor 4
1-5 Introduction of Time Equation Prediction 5
1-6 Introduction of Lightly Doped Drain (LDD) 7
1-7 Introduction of Technology Computer Aid Design 7
1-8 About the Thesis 9
Chapter 2 Device Description and Measurement Setup 17
2-1 Introduction 17
2-2 Device Structure Description 17
2-3 Measurement Methodology 18
2-3-1 Measurement Setup 18
2-3-2 ID-VG Measurement 18
2-3-3 ID-VD Measurement 19
2-3-4 ISUB-VG Measurement 20
2-3-5 Simulation Setup 21
2-4 Summary 22
Chapter 3 On-state Degradation of Hot Carrier Stress and Model of Device Lifetime 33
3-1 Introduction 33
3-2 Experiment Setup and Stress Condition 34
3-3 Hot Carrier Degradation of On-state Conditions 35
3-4 Scaling Factor of On-state Degradation 37
3-5 Discussion of Degradation at Low Gate Voltage 38
3-6 Discussion of Degradation at High Gate Voltage 41
3-7 Lifetime Model of On-state Condition 43
3-8 Definition of Available Region in Scaling Factor Model 44
3-9 Summary 45
Chapter 4 Analysis of Device Lifetime Model under different LDD Doping Concentration 68
4-1 Introduction 68
4-2 Experiment and Analysis of Hot Carrier Stress under Various LDD Concentration 69
4-3 Lifetime Model of Different LDD Doping Concentrations 70
4-4 Discussion of Characteristics under Various LDD Concentrations 71
4-5 Summary 74
Chapter 5 Conclusion and Future Work 104
5-1 Conclusion 104
5-2 Future Work 106
Reference 107
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