系統識別號 U0026-2007202009481500
論文名稱(中文) 溶膠凝膠法備製ZrCeOx薄膜於電阻式記憶體之應用
論文名稱(英文) Research of Sol-Gel Derived ZrCeOx Thin Films for RRAM Applications
校院名稱 成功大學
系所名稱(中) 電機工程學系
系所名稱(英) Department of Electrical Engineering
學年度 108
學期 2
出版年 109
研究生(中文) 吳祐紳
研究生(英文) You-Shen Wu
學號 N26074045
學位類別 碩士
語文別 中文
論文頁數 102頁
口試委員 指導教授-黃正亮
中文關鍵字 溶膠凝膠法  ZrCeOx薄膜  電阻式記憶體 
英文關鍵字 Sol-gel  ZrCeOx thin film  RRAM  Polycrystalline 
中文摘要 本研究利用溶膠凝膠法製備ZrCeOx薄膜,並塗佈在ITO玻璃基板上,再使用電子束蒸鍍法鍍上金屬作為頂電極,製程出金屬-絕緣層-金屬(MIM)結構之電阻式記憶體。本研究分成兩部分,第一部分討論ZrCeOx薄膜在未退火的情況下,改變薄膜厚度與頂電極(Al、Ti)的變因之下,其元件電阻切換特性之影響,透過量測可發現僅有一層與兩層之薄膜製程之元件具有電阻切換特性,且以Al作為頂電極之元件有較佳的電阻切換特性,皆為負開正關之雙極切換機制,其操作次數約為150次,Ron/Roff值皆有大於101,薄膜厚度增加可能造成電阻值上升導致並未產生電阻切換機制。以Ti作為頂電極之元件,其操作次數約為60次,且Ron/Roff值小於101,推測是因為上下電極之功函數差所致。
在第二部分,我們選擇電阻切換特性較好的Al作為頂電極,分別進行200 ℃、300 ℃、400 ℃之退火製程,探討薄膜經過退火製程後對元件電阻切換特性的影響,經量測發現皆為負開正關之雙極切換機制,在退火溫度為400 ℃之元件有最佳的電阻切換特性,其操作次數高達646次,雖然Ron/Roff值隨著退火溫度的上升有變窄的趨勢,但仍維持101足夠的寬度分辨高低阻態。由於薄膜經過退火製程後,銦離子的擴散與薄膜內之氧空缺量增加,使導通燈絲更容易形成,產生操作電壓降低,操作次數明顯上升,元件因而有更佳的穩定度與可靠度。
英文摘要 Amorphous ZrCeOx thin films were prepared by sol-gel method and the resistive switching (RS) properties of sol-gel derived Al/ZrCeOx/ITO devices were investigated. The influences of annealing temperature, film thickness, and top electrode on the RS properties were also discussed. It is found that the 2 layered thin film annealed at 400 ℃ can operate up to 643 times. In addition, as the number of coating layers increases, the repeatability of the components becomes more stable. However, On/Off ratio and retention times were not affected by the number of coating layers or with/without annealing. The On/Off ratio values are all in between 101 and 102, and the retention times are up to 104 seconds. The reason for the large increase in the number of operations after annealing is likely attributed to the diffusion of In ions from ITO substrate to ZrCeOx film and the increased oxygen vacancies, which would allow the discontinuous ions to fit into the connecting process of the formation of filaments. In addition, the conduction mechanism could be classified into ohmic conduction in the low resistance state and space-charge-limited current conduction mechanism in the high resistance state.
論文目次 中文摘要 I
Abstract III
表目錄 XXIV
圖目錄 XXV
第一章 緒論 1
1.1 前言 1
1.2 研究動機 2
第二章 文獻回顧 3
2.1 ZrCeO4材料 3
2.2 非揮發性記憶體(Non-volatile memory)介紹 4
2.2.1 相變化記憶體 (Phase Change RAM,PCRAM) 5
2.2.2 鐵電記憶體 (Ferroelectric RAM,FeRAM) 6
2.2.3 磁阻式記憶體 (Magnetic RAM,MRAM) 7
2.2.4 電阻式記憶體 (Resistance RAM,RRAM) 8
2.3 電阻式隨機存取記憶體(RRAM) 9
2.4 電阻轉換機制 13
2.4.1 導電燈絲機制(Filamentary conducting path) 13
2.4.2 界面導電機制(Interface-type conducting path) 15
2.4.3 離子遷徙機制(Ionic migration) 17
2.5 漏電流傳導機制 20
2.5.1 蕭特基發射(Schottky Emission) 20
2.5.2 歐姆接觸(Ohmic Contact) 21
2.5.3 穿隧(Tunneling) 22
2.5.4 普爾-法蘭克發射(Poole-Frenkel Emission) 23
2.5.5 空間電荷限制傳導(Space-Charge Limited Current, SCLC) 24
第三章 實驗方法及步驟 29
3.1 溶膠凝膠法(Sol-Gel)介紹 29
3.1.1 薄膜製作 30
3.1.2 乾燥處理 30
3.1.3 高溫結晶熱處理 31
3.2 電子束蒸鍍法(E-Beam Evaporation)介紹 32
3.3 實驗流程 33
3.3.1 藥品 33
3.3.2 樣品製備 33
3.4 實驗設備 35
3.4.1 電子秤 35
3.4.2 磁石攪拌平台 35
3.4.3 旋轉塗佈機 35
3.4.4 熱板 36
3.4.5 爐管 36
3.5 鑑定與分析儀器 37
3.5.1 低掠角薄膜X光繞射儀 (X-ray Diffractometer, XRD) 37
3.5.2 高解析掃描電子顯微鏡 (High Resolution Scanning Electron Microscope, HR-SEM) 38
3.5.3 X光電子能譜儀(X-ray Photoelectron Spectroscope, XPS) 40
3.5.4 紫外線/可見光分光光譜儀(UV/VIS/NIR spectrometers) 40
3.5.5 半導體參數分析儀(Semiconductor Device Analyzer Mainframe) 41
第四章 結果與討論 42
4.1 ZrCeOx薄膜分析 42
4.1.1 XRD薄膜晶相分析 42
4.1.2 SEM薄膜分析 43
4.1.3 XPS表面化學分析 46
4.1.4 薄膜UV-VIS量測 51
4.2 ZrCeOx電性分析 54
4.2.1 不同薄膜厚度之下Al/ZrCeOx/ITO電阻切換之影響 54
4.2.2 不同頂電極(Al、Ti)之下電阻切換之影響 64
4.2.3 不同退火溫度之下Al/ZrCeOx/ITO電阻切換之影響 73
4.3 比較與討論 93
第五章 結論 95
參考文獻 97
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