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系統識別號 U0026-1908201822450100
論文名稱(中文) 拓樸絕緣體碲化銻/碲化鉍的p-n接面磊晶成長與研究
論文名稱(英文) Epitaxial Growth and Characterizations of Topological P-N Junction in Sb2Te3/Bi2Te3 Heterostructures
校院名稱 成功大學
系所名稱(中) 物理學系
系所名稱(英) Department of Physics
學年度 106
學期 2
出版年 107
研究生(中文) 林冠廷
研究生(英文) Guan-Ting Lin
學號 L26054289
學位類別 碩士
語文別 英文
論文頁數 63頁
口試委員 指導教授-黃榮俊
口試委員-陳宜君
口試委員-郭建成
中文關鍵字 分子束磊晶  拓樸絕緣體  碲化鉍  碲化銻  p-n接面 
英文關鍵字 molecular beam epitaxy  topological insulator  Bi2Te3  Sb2Te3  p-n junction 
學科別分類
中文摘要 藉由分子束磊晶(MBE),成功將碲化鉍、碲化銻拓樸絕緣體薄膜成長在藍寶石基板上,由臨場高能量電子繞射儀(RHEED)及原子力顯微鏡(AFM)顯示這些表面平滑的薄膜,再經由X光繞射(XRD)看出碲化鉍、碲化銻薄膜為單晶結構。底定出碲化鉍最佳的合金結構品質的成長條件為:鉍碲比例為1:10且成長溫度在310 ℃;而碲化銻的最佳成長條件為:銻碲比例為1:17且成長溫度在275 ℃。最後藉由角解析光電子能譜(ARPES),觀察到碲化鉍、碲化銻薄膜的表面態,直接證實其為拓樸絕緣體。
在獲得碲化鉍、碲化銻單層薄膜的成長參數後,成長變厚度的碲化銻/碲化鉍雙層膜於藍寶石基板上,再將其做成元件,量測載子傳輸的特性。最後於固定底層碲化鉍厚度且改變上層碲化銻厚度的實驗中,觀察到載子傳輸行為的改變。相信藉由此種調控雙層拓樸絕緣體厚度的方法,能在將來提供給相關領域的學者參考與使用。
英文摘要 Bi2Te3 and Sb2Te3 topological insulator thin films have been successfully grown on Al2O3 (0001) substrates by molecular beam epitaxy (MBE). In-situ reflection high energy electron diffraction (RHEED) and ex-situ atomic force microscopy (AFM) indicate the smooth surface of the thin films. Single crystalline structure of both Bi2Te3 and Sb2Te3 films are presented in XRD spectra. The optimal growth condition for Bi2Te3 (Sb2Te3) is that the substrate nominally set at 310 ℃ (275 ℃) with beam flux ratio Bi:Te ~ 1:10 (Sb:Te ~ 1:17). At last, the surface state of Bi2Te3 and Sb2Te3 thin films via ARPES reveals that they are indeed topological insulators.
After obtaining the growth conditions of Bi2Te3 and Sb2Te3 single layer, we fabricated Sb2Te3/ Bi2Te3 bilayer on Al2O3 (0001) substrates and transferred a Hall bar pattern onto the films by photolithography. Electrical transport properties illustrate the transition of carrier transport behavior with varying the thickness of Sb2Te3 upper layer. We can assert that such method of regulating the thickness of bilayer topological insulator to tune the Dirac point to a desired energetic position will play an important role in the near future.
論文目次 Abstract I
摘要 II
Acknowledgement III
Contents IV
List of tables VI
List of figures VII
Chapter 1. Introduction 1
1.1 Introduction of topological insulator (TI) 1
1.1.1 Overview of TI 2
1.1.2 The characteristics of Sb2Te3 and Bi2Te3 4
1.2 Paper reviews for MBE growth of Bi2Te3 and Sb2Te3 6
1.2.1 MBE growth of Bi2Te3 on Al2O3 6
1.2.2 MBE growth of Sb2Te3 on Si (111) 9
1.2.3 Sb2Te3/Bi2Te3 p-n junction 13
1.3 Motivation 19
Chapter 2. Experimental equipment and principles 20
2.1 Molecular beam epitaxy (MBE) 20
2.1.1 The fundamental of MBE 21
2.1.2 The MBE system 22
2.2 Crystal structural determination 29
2.2.1 Atomic force microscopy (AFM) 29
2.2.2 X-ray diffraction (XRD) 30
2.2.3 Angle-resolved photoemission spectroscopy (ARPES) 31
2.3 Hall effect theory 32
Chapter 3. Theories and experiments 33
3.1 Thin-film growth theory 33
3.2 Experiments 35
3.2.1 Sample preparation 35
3.2.2 Hall measurement 36
Chapter 4. Structural characterization of Sb2Te3 and Bi2Te3 39
4.1 RHEED pattern for sapphire (0001) substrate 40
4.2 Structure analysis of Bi2Te3 on sapphire (0001) 41
4.2.1 RHEED and AFM images for Bi2Te3 samples 41
4.2.2 XRD spectra for Bi2Te3 samples 44
4.3 Structure analysis of Sb2Te3 on sapphire (0001) 48
4.3.1 RHEED and AFM images for Sb2Te3 samples 48
4.3.2 XRD spectra for Sb2Te3 samples 50
4.4 Te-capped sample 53
4.5 Structural analysis of Sb2Te3/Bi2Te3 bilayer 54
4.5.1 XRD spectra for Sb2Te3/Bi2Te3 bilayer 54
4.6 ARPES measurements 55
4.6.1 ARPES for Sb2Te3 55
4.6.2 ARPES for Bi2Te3 56
4.7 Transport measurements 57
4.7.1 Electrical properties analysis 57
4.7.2 Sb2Te3/Bi2Te3 bilayer analysis 58
Chapter 5. Conclusion 59
References 60
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