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系統識別號 U0026-1607201220240300
論文名稱(中文) 圖案化基板之殘留應力分析
論文名稱(英文) Residual Stress Analysis of Patterned Substrates
校院名稱 成功大學
系所名稱(中) 工程科學系碩博士班
系所名稱(英) Department of Engineering Science
學年度 100
學期 2
出版年 101
研究生(中文) 陳嘉明
研究生(英文) Jia-Ming Chen
學號 n96991225
學位類別 碩士
語文別 中文
論文頁數 52頁
口試委員 指導教授-李輝煌
口試委員-黃聖杰
口試委員-黃登淵
中文關鍵字 圖案化基板  殘留應變  殘留應力  有限元素分析 
英文關鍵字 Patterned Substrates  Residual strain  Residual stress  Finite Element Analysis 
學科別分類
中文摘要 薄膜技術在電子元件中扮演相當重要的關鍵部分。近年來薄膜技術和薄膜材料迅速發展,從積體電路到電子構裝等產業,都需要薄膜技術來使得各式各樣的電子產品具有更好的效能。因為現在能源缺乏的問題,使得節能省碳的課題受到了重視,於是利用發光二極體來取代現有的固體照明,可以達到節省能源的目的。發光二極體照明技術的發展,其中主要是研究如何增加光萃取的效率,現在主流的做法是在基板上蝕刻出圖案,也就是圖案化基板,可以利用突出的部分,造成光的折射增加進而提高LED的功率。
本論文將利用既有的商用有限元素分析軟體ANSYS來進行模擬,考慮到異質的薄膜磊晶,因為薄膜與基板材質不同,從製造的過程以及從高溫降回室溫時,兩者熱膨脹係數不同而產生殘留應變,使得晶圓翹曲。針對圖案化類型,進行模擬,藉此求知應力和圖案化基版之間的關係。
從研究結果發現,因材料彼此之間的熱膨脹係數不同,在降溫到室溫的過程中會產生殘留應力。模擬分析結果顯示出不同圖案化基板的殘留應力情況亦不同,和實驗數據結果比較後發現,當模擬只考慮熱應力時,類似的圖案化基板之間所產生的殘留應變差異沒有很大。針對此結果,其原因應該是沒有把磊晶品質所產生的本質應力考慮進來。另外把模擬出來的結果和實驗數據作計算,可以得到磊晶品質所產生的本質應力,並且發現隨著差排密度變大,本質應力也跟著增大。目前在有限元素分析差排、本質應力的相關文獻非常稀少,未來在模擬上如果能準確的加入本質應力的影響,對於減少實驗成本支出、提高成品良率的目標將有更大的幫助。
英文摘要 The thin film technology plays an important part in electronic components. In recent years, the thin film technology and thin film materials have developed rapidly, from integrated circuits to the electronic packaging and other industries. The thin film technology is necessary in order to make all kinds of electronic products to perform better. Due to the lack of energy, saving energy and reducing the carbon dioxide have been a crucial issue; therefore, the use of light emitting diode can achieve the purpose of saving energy and replace the solid-state lighting that has been widely used now. The research of light-emitting diode lighting technology focuses on how to increase the efficiency of light extraction, and now the mainstream approach is to etch a pattern on a substrate, which is “the patterned substrate,” and makes a good use of the prominent part to increase the refraction of light to raise the efficiency of LED.
This research paper will use ANSYS, the commercial finite element analysis software. The heterogeneity of thin film epitaxial film in, the difference between substrate materials, the fabrication process, and the descending from the high temperature down to the room temperature are the factors that should be considered, the two different coefficients of thermal expansion bring the residual strain, making the wafer warpage. As for the simulation pattern type, to take this knowledge the relationship between stress and patterned substrates.
From the research result, when the temperature drops down to the room temperature, the residual stress will be caused by the different coefficient of thermal expansion between the materials. The simulation results show that if the patterned substrate differs, the residual stress will change as well. From the experimental data and simulation results, it shows that the simulation should not only consider the thermal stress, the differences of residual strain arising between the similar patterns of substrate are also required. For this result, the research has not considered the intrinsic stress of the epitaxial quality. Moreover, the tensile strain increased with the raising of dislocation density. Now there are not many references for dislocation and intrinsic stress for finite element analysis, if we can add the intrinsic stress to the simulation, it will reduce experimental costs and improve the fabrication yields.
論文目次 目錄
摘要 I
Abstract II
誌謝 III
目錄 III
表目錄 V
圖目錄 VI
第一章 緒論 1
1-1研究背景與動機 1
1-2文獻回顧與相關研究 1
1-3論文架構 3
第二章 運作原理與相關理論 5
2-1LED基板簡介 5
2-1-1基板選擇 5
2-1-2化學氣相沉積 6
2-1-3減少差排 7
2-2薄膜內應力簡介 13
2-2-1何謂薄膜內應力 13
2-2-2殘留應力成因 14
2-3量測方法與簡化之相關理論 15
2-3-1 Stoney Formula 15
2-3-2控制方程式 16
2-3-3力平衡方程式 17
2-3-4應變與變位關係 18
2-3-5應力與應變關係 18
2-3-6 殘留應力測量方式 19
第三章 有限元素分析 23
3-1軟體選用及簡介 23
3-2問題描述 24
3-3有限元素分析流程 26
3-3-1材料參數 26
3-3-2幾何模型 26
3-3-3邊界及負載條件 27
3-3-4後處理 28
第四章 模擬與實驗結果 29
4-1曲率量測結果 29
4-2薄膜模擬結果 31
4-2-1 無圖案化結構模擬結果 31
4-2-2 圖案化結構模擬結果 38
4-3模擬與實驗相關性探討 44
第五章 結論與未來展望 45
5-1結論 45
5-2未來展望 45
參考文獻 47
索引 50
自述 52
參考文獻 參考文獻
[1] G.G. Stoney, “The tension of metallic films deposited by electrolysis,” Proceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, vol. 82, issue 553, pp. 172-175, 1909.
[2] R.C. Cammarata, “Surface and interface stress effects in thin films,” Progress in Surface Science, vol. 46, issue 1, pp. 1-38, 1994.
[3] F. Spaepen, “Interfaces and stresses in thin films,” Acta Materialia, vol. 48, issue 1, pp. 31-42, 2000.
[4] W.D. Nix and B.M. Clement, “Crystallite coalescence: A mechanism for intrinsic tensile stresses in the thin films,” Joumal of Materials Research, vol. 14, issue 8, pp. 3467-3473, 1999.
[5] W.D. Nix and M.F. Doerner, “Stresses and deformation processes in thin films on substrates,” Critical Reviews in Solid State and Materials Sciences, vol. 14, issue 3, pp. 225-268, 1988.
[6] W.D. Nix, “Mechanical properties of thin films,” Metallurgical and Materials Transaction A, vol.20, no. 11, pp. 2217-2245, 1989.
[7] Yoshida, S., Misawa, S. and Gonda, S., “Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates,” Applied Physics Letters, vol. 42, issue 5, pp. 427-429, 1983.
[8] H. Arnano, N. Sawaki, Y. Toyoda and I. Akasaki, Appl. Phys. Lett. 48, 353(1986).
[9] S. Nakamura, MRS BULLETIN, 37 (1998)
[10] M. Yamada, T. Mitani, Y. Nakukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M.Sano and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41, L1431, 2002.
[11] K. Tadatorno, H. Okagawa, Y. Ohuchi, I. Tsunekawa, Y. Imada, M.Katol and T. Taguchi, Jpn. J. Appl. Phys. 40, L583, 2001.
[12] A. Pramanik and L.C. Zhang, “Residualstresses in silicon-on-sapphirethinfilmsystems,” International Journal of Solids and Structures, vol. 48, issue 9, pp. 1290-1300, 2011.
[13] K. Hiromatsu et al. J. Crystal Growth 115, P.628, 1991.
[14] H. Amano et al. Appl. Phys. Lett 48. P.353, 1986.
[15] I. Akasaki et al. 3. Crystal Growth 98. P.209, 1989.
[16] Pierre Gibart, “Metal organic vapor phase epitaxy of GaN and lateral overgrowth,” Reports on Progress in Physics, vol. 67, pp.667, 2004.
[17] 田民波,薄膜技術與薄膜材料,五南圖書出版股份有限公司,2007年。
[18] 王建義,薄膜工程學,全華科技圖書股份有限公司,2004年。
[19] 史光國,半導體發光二極體及固體照明,全華科技圖書股份有限公司,2005年。
[20] 汪信呈,使用新式的圖案化藍寶石基版來有效的改善氮化鎵系列的發光二極體,國立成功大學光電科學與工程研究所碩士論文,97年6月。
[21] S. Hearne, E. Chason, J. Han, J. A. Floro, J. Figiel, J. Hunter, H. Amano, and I. S. T. Tsong, “Stress evolution during metalorganic chemical vapor deposition of GaN,” The 31st European Solid-State Device Research Conference, Appl. Phys. Lett. 74, 356, 1999.
[22] Woei-Kai Wang, Dong-Sing Wuu, Lin, S.-H., Han, P., Horng, R.-H., Ta-Cheng Hsu, Huo, D.T.-C., Ming-Jiunn Jou, Yuan-Hsin Yu, Lin, A., “Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates,” IEEE Journal of Quantum Electronics, vol. 41, issue 11, pp. 1403-1409, 2005.
[23] Krost, A., Dadgar, A., Strassburger, G., Clos, R., “GaN-based epitaxy on silicon: stress measurements,” Physica Status Solidi (A), vol. 200, Issue 1, pp.26-35, 2003.
[24] Hung-Cheng Lin, Hsueh-Hsing Liu, Geng-Yen Lee, Jen-Inn Chyi, Chang-Ming Lu, Chih-Wei Chao, Te-Chung Wang, Chun-Jong Chang,and Solomon W. S. Chi, “Effects of Lens Shape on GaN Grown on Microlens Patterned Sapphire Substrates by Metallorganic Chemical Vapor Deposition,” Journal of The Electrochemical Society, vol. 157, pp.H304-H307, 2010.
[25] Dong-Sing Wuu, Hsueh-Wei Wu, Shih-Ting Chen, Tsung-Yen Tsai, Xinhe Zheng, Ray-Hua Horng, “Defect reduction of laterally regrown GaN on GaN/patterned sapphire substrates,” Journal of Crystal Growth, vol. 311, issue 10, pp.3063-3066, 2009.
[26] A. Dadgara, C. Hums, A. Diez, J. Bläsing, A. Krost, “Growth of blueGaNLEDstructures on 150-mm Si(1 1 1),” Journal of Crystal Growth, vol. 297, issue 2, pp.279-282, 2006.
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