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系統識別號 U0026-1508201600185100
論文名稱(中文) 硒化鉍拓樸絕緣體摻雜銻及鉻之電性及磁性探討
論文名稱(英文) Magnetic and Electrical Properties of Cr and Sb Doped Bi2Se3 Topological Insulator
校院名稱 成功大學
系所名稱(中) 物理學系
系所名稱(英) Department of Physics
學年度 104
學期 2
出版年 105
研究生(中文) 廖至為
研究生(英文) Chih-Wei Liao
學號 L26034132
學位類別 碩士
語文別 英文
論文頁數 85頁
口試委員 指導教授-黃榮俊
口試委員-陳宜君
口試委員-黃旭明
中文關鍵字 硒化鉍  銻摻雜  鉻摻雜  角分辨光電子能譜  磁導 
英文關鍵字 Bi2Se3  Sb doping  magnetic doping  ARPES  magnetocinductivity 
學科別分類
中文摘要 本實驗是透過分子束磊晶(MBE)成長硒化鉍拓樸絕緣體摻雜銻及鉻之20奈米薄膜,由反射式電子高能繞射(RHEED)、X-ray繞射分析(XRD)及原子力顯微鏡(AFM)去觀察不同參數的樣品晶格結構,經過成大微奈米中心的微影系統將樣品製作成Hall bar元件以便量測精準電性,元素分析及能帶結構分別是在國家同步輻射中心(NSRRC)進行X光射線電子能譜(XPS)及 角分辨光電子能譜(ARPES)之量測,再將已選好之最佳成長參數樣品送去量測PPMS,藉由量測樣品之磁阻變化可分別在有摻雜磁性原子鉻及無摻雜磁性原子鉻之拓樸絕緣體看到弱返局域性(WAL)及弱局域性(WL)的轉變;另外,我們也可藉由磁導的曲線變化證明在硒化鉍拓樸絕緣體共摻替及鉻中,固定鉻的含量且增加銻的含量可有效增加磁性對於局域性的影響,進一步推論,我們可以在避免過量摻雜磁性造成的結構破壞的狀況下,單純增加銻的含量就可以去提高樣品的居禮溫度(Tc)。
英文摘要 Sb doped and Cr doped Bi2Se3 topological insulators have been established on sapphire (0001) substrate by molecular beam epitaxy (MBE). Structural characterization and electrical properties were verified by in-situ reflection high energy electron diffraction (RHEED), ex-situ atomic force microscopy (AFM), X-ray diffraction (XRD) and carrier density measurements. The real concentration of each element in our sample were verified by X-ray photoelectron spectroscopy (XPS) and the band structure of samples were revealed by angle-resolved photoemission spectroscopies (ARPES). The weak-anti localization (WAL) and weak localization (WL) performance were investigated in Sb doped Bi2Se3 and Cr-doped Bi2Se3 through the magnetoconductivity. Further increase Sb doping with Cr-doping fixed would enhance WL behavior in Sb,Cr co-doped Bi2Se3. In addition, the curie temperature of Cr-doped Bi2Se3 was observed by the exchanging performance of magnetoconductivity with the altering measured temperature.
論文目次 Abstract …………………………………………………………………………………………………………………………..I
Abstract (in Chinese) II
Acknowledgement III
Contents…. IV
Chapter 1. Introduction 1
1.1 Introduction 1
1.1.1The development of Topological Insulator 2
1.1.2The characteristics of Bi2Se3 5
1.2 Paper reviews for charge doping and magnetic doping topological insulators 9
1.2.1 Charge doping of topological insulator 9
1.2.2 Magnetic doping of topological insulator 13
1.3Paper review of magnetoresistance in topological insulators 16
1.3.1Transport properties of magnetically doped topological insulator 16
1.4Motivation 20
Reference ………………………………………………………………………………………………………………………..21
Chapter 2. Theories and principles 23
2.1 Thin films growth theory 23
2.1.1 Growth mode 23
2.1.2 Growth theory 24
2.2 Hall effect theory 26
2.2.1 The simple theory of the Hall effect 26
2.3 Weak localization and anti-localization 27
2.3.1 Signatures of Weal localization and anti-localization 27
2.3.2 Weak anti-localization and weak localization theory 29
Reference. 31
Chapter 3. Experimental equipment and principles 32
3.1 Molecular beam epitaxy 32
3.1.1 The Fundamental of MBE 33
3.1.2 The MBE system 34
3.1.3 evaporators 35
3.1.4 Sample preparation 37
3.1.5 Hall bar device 38
3.2 sample characterization techniques 39
3.2.1 Reflection high-energy electron diffraction (RHEED) 39
3.2.2 X-ray diffraction (XRD) 41
3.2.3 Atomic force microscopy (AFM) 42
3.2.4 Physical properties measurement system(PPMS) 44
3.3 Experimental set up 46
References 47
Chapter 4. Structural characterization of Cr and Sb doped Bi2Se3 48
4.1 Structural and electrical properties of BiSe system 49
4.1.1 Pure Bi2Se3 49
4.1.2 Sb-doped Bi2Se3 53
4.1.3 Cr-doped Bi2Se3 57
4.1.4 Sb and Cr-doped Bi2Se3 61
4.2 X-ray Photoelectron Spectroscopy (XPS) 66
4.3 Carrier density comparison 68
4.4 Angle–Resolved Photoemission Spectroscopy(ARPES) 70
Summary ………………………………………………………………………………………………………………..72
References 73
Chapter 5. Magnetoconductivity 74
5.1 Magnetoconductivity comparison 75
5.2 Magneotconductivity of Cr0.12(Bi1-xSbx)1.88Se3 78
5.3 Temperature dependent of magnetocondcutivity in Cr0.12Bi1.88Se3 80
Summary. 83
Reference ………………………………………………………………………………………………………………..84
Chapter 6. Conclusions 85
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