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系統識別號 U0026-1008202018100500
論文名稱(中文) 無應變鈦酸鍶薄膜的鐵電特性厚度極限
論文名稱(英文) Thickness limit of ferroelectricity in non-strained SrTiO3 Thin Films
校院名稱 成功大學
系所名稱(中) 物理學系
系所名稱(英) Department of Physics
學年度 108
學期 2
出版年 109
研究生(中文) 黃浩翔
研究生(英文) Hao-Hsiang Huang
學號 L26074297
學位類別 碩士
語文別 中文
論文頁數 41頁
口試委員 指導教授-楊展其
口試委員-陳宜君
口試委員-劉恆睿
口試委員-朱英豪
中文關鍵字 順電性  弛豫鐵電體  鐵電性  鈦酸鍶 
英文關鍵字 paraelectricity  relaxor  ferroelectricity  SrTiO3 
學科別分類
中文摘要 在材料領域中,三維系統的單晶結構隨著技術的成熟,在保持晶格完整還能同時降低厚度,形成準二維系統(Quasi-two-dimensional system)已是一大趨勢,其中薄膜磊晶於控制厚度與成長單晶結構方面為優秀的製程技術,且透過脈衝雷射沉積法(Pulsed Laser Deposition),製備材料快速之外,更能保有與原材料相同比例的薄膜。
鈦酸鍶(SrTiO3,STO)是鈣鈦礦結構中擁有順電性(Paraelectricity)的一種材料,雖然在低溫受量子漲落影響抑制了鐵電性(Ferroelectricity),而展現量子順電性(Quantum Paraelectricity),許多研究嘗試在室溫,透過對鈦酸鍶做化學,力學以及光學上的調控,使在低溫受限的鐵電性能在室溫下展現。
在此研究中,我們運用了脈衝雷射沉積法的技術成長薄膜,也運用濕式蝕刻的分離技術(Freestanding),將薄膜轉移至其他基板上,和表面形成異質結構。在分離的前後,藉由原子力顯微鏡(Atomic Force Microscope)探測薄膜為平坦的表面,接著以國家同步輻射中心(NSRRC)提供的X射線分析(X-Ray Diffraction & X-Ray Linear Dichroism),薄膜以層層磊晶的方式生長成單晶結構,最後以接觸式表面電位顯微鏡(contact-Kelvin Probe Force Microscope),也成功量測到鐵電性可以靠轉移的方式於室溫下展現,驗證了先前的研究以及在此基礎上有所突破。
英文摘要 As the mature technology, the thickness of single crystal thin films in three-dimensional system can be reduced to become ultrathin films while remained the intriguing functionalities. These ultrathin material structures were called quasi-two-dimensional system. It is an excellent technique in terms of thickness control and growth of single crystal structure. Strontium titanate (SrTiO3, STO) is a paraelectric materials in perovskite structure. Although it is affected by quantum fluctuations at low temperatures to suppress ferroelectricity, it exhibits the quantum paraelectricity at ambient temperature. Many researchers have tried to perform chemical composition, mechanical, and optical adjustments to strontium titanate, so that the low-temperature limited ferroelectric properties can be displayed at room temperature. In this study, we use pulsed laser deposition technique to grow thin films, and also use wet etching separation technique (also called freestanding) to transfer the thin films to other substrates and to integrate heterogeneous structures. We use both the scanning probe microscope and X-ray analysis to carry out the ferroelectricity characterization in strontium titanate thin films at room temperature before and after freestanding and also verify the previous research and breakthroughs on this basis.
論文目次 摘要 I
英文摘要 II
目錄 XI
圖目錄 XIII
第一章 緒論 1
第二章 文獻回顧 2
2.1 鐵電材料簡介 2
2.2 弛豫鐵電(Relaxor Ferroelectrics)介紹 3
2.3 奈米電域(Polar Nanoregions, PNRs)介紹 4
2.4 鈦酸鍶(SrTiO3, STO)介紹 5
2.4.1 STO基本特性 5
2.4.2 STO鐵電特性 6
第三章 樣品製程與分析 7
3.1 脈衝雷射沉積法 (Pulsed Laser Deposition,PLD) 7
3.2 Freestanding (FS)技術 9
3.3 X射線 (X-Ray)分析 11
3.3.1 X射線簡介 11
3.3.2 X射線繞射分析(X-Ray Diffraction,XRD) 11
3.3.3 X射線吸收光譜(X-ray absorption spectroscopy,XAS) 13
3.3.4晶體場線性二向色性(Crystal field linear dichroism) 15
3.4掃描探針顯微鏡 (Scanning Probe Microscope, SPM) 18
3.4.1原子力顯微鏡(Atomic Force Microscope, AFM) 18
3.4.2 壓電力顯微鏡(Piezoelectric Force Microsocpe, PFM) 19
3.5樣品製程與實驗設計 23
3.5.1 樣品製備 23
3.5.2 樣品分析 23
第四章 結果與討論 25
4.1 FS STO薄膜的厚度對鐵電特性的影響 25
4.1.1 FS前STO薄膜的電性量測結果 25
4.1.2 FS後STO薄膜的X光分析結果 25
4.1.3 FS後STO薄膜的電性量測結果 30
4.2 FS STO薄膜剝離於不同基板對鐵電特性的影響 31
4.2.1 FS前STO薄膜的電性量測結果 31
4.2.2 FS後STO薄膜的電性量測結果 34
第五章 結論 38
參考文獻 39
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