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系統識別號 U0026-0812200914022189
論文名稱(中文) 使用變壓器架構之3-5-GHz超寬頻接收機CMOS射頻晶片的設計研究
論文名稱(英文) Research on 3-5-GHz Transformer Based CMOS RFICs For UWB Receiver Applications
校院名稱 成功大學
系所名稱(中) 電腦與通信工程研究所
系所名稱(英) Institute of Computer & Communication
學年度 95
學期 2
出版年 96
研究生(中文) 賴季霆
研究生(英文) Ji-Ting Lai
學號 q3694159
學位類別 碩士
語文別 中文
論文頁數 90頁
口試委員 口試委員-盧春林
口試委員-張嘉展
口試委員-洪子聖
指導教授-莊惠如
口試委員-張盛富
中文關鍵字 變壓器  超寬頻 
英文關鍵字 UWB  transformer 
學科別分類
中文摘要 本論文研究應用於UWB接收機之射頻前端CMOS射頻晶片。論文共分三部份,第一部份先就變壓器做介紹,接下來是兩顆使用變壓器的射頻晶片,包括使用變壓器之3-5-GHz低電壓高隔離度吉伯特混波器、使用變壓器之3-5-GHz低電壓射頻接收機前端電路。所研製之射頻晶片均使用TSMC 0.18 μm 1P6M CMOS製程,晶片量測上除了附錄中的射頻切換開關使用on-wafer方式量測之外,其餘皆採用打鎊線至PCB測試板上進行。
使用變壓器之3-5-GHz低電壓高隔離度吉伯特混波器是以一個變壓器隔開混波器的轉導級與開關級,達到低電壓操作與高隔離度的優點。量測結果轉換增益為0.8–4.4 dB,LO-RF隔離度為36.5–46.4 dB,LO-IF隔離度為18–23.5 dB,RF-IF隔離度為22-26.2 dB,IP1dB為-7.8–-0.8 dBm,IIP3為-10.8–-9.75 dBm。
使用變壓器之3-5-GHz 低電壓射頻接收機前端電路是配合前一章所做的使用變壓器之混波器,設計一個射頻前端電路,其中包括低雜訊放大器,單端轉雙端的變壓器平衡器,使用變壓器之混波器。晶片應用在MB–OFDM中band group A,量測結果轉換增益在RF頻率為3.168-3.696 GHz時為4.1-9.3 dB;RF頻率為3.696-4.224 GHz時為6.6-11.8 dB;RF頻率為4.224-4.752 GHz時為7.8-10.9 dB。雜訊指數在RF頻率為3.168-3.696 GHz時為9.2-16.3 dB;RF頻率為3.696-4.224 GHz時為11.2-18.4 dB;RF頻率為4.224-4.752 GHz時為9.4-17.3 dB。IP1dB為 -18–-13 dBm,IIP3為-10.5–-5.8 dBm。
英文摘要 This thesis presents the research on applications of CMOS RFICs for UWB receiver。In the first part is the introduction of transformers, next part is two transformer based RFICs. They are a transformer based low voltage high isolation 3-5-GHz Gilber-type mixer and a transformer based low voltage 3-5-GHz front end for UWB receiver, respectively. All of the RFICs is in a TSMC 0.18 μm 1P6M CMOS process. Expect the TRSW in the appendix is on-wafer measurement , the others are measured on FR4-PCB test board.
The transformer based low voltage high isolation 3-5-GHz Gilber-type mixer used a transformer to isolated the transconductance stage and switch stage in order to achieve low voltage operation and high isolation. The chip has been measured at supply voltage of 1 V. Conversion gain is 0.8–4.4 dB, isolation of LO-RF is 36.5–46.4 dB, isolation of LO-IF is 18–23.5 dB, isolation of RF-IF is 22-26.2 dB, input P1dB is -7.8–-0.8 dBm, input IP3 is -10.8–-9.75 dBm.
The transformer based low voltage 3-5-GHz front end for UWB receive is include the transformer-based mixer introduced previously, a transformer-based low noise amplifier and a transformer-type balun that transforms the single end output signal of low noise amplifier into differential end signal. This chip is work at MB–OFDM band group A, the measurement result show the conversion gain is 4.1-9.3 dB at 3.168-3.696 GHz, 6.6-11.8 dB at 3.696-4.224 GHz, 7.8-10.9 dB at 4.224-4.752 GHz; the noise is 9.2-16.3 dB at 3.168-3.696 GHz, 11.2-18.4 dB at 3.696-4.224 GHz, 9.4-17.3 dB at 4.224-4.752 GHz, input P1dB is -18–-13 dBm, input IP3 is -10.5–-5.8 dBm.
論文目次 第一章 緒論 1
1.1 UWB研究背景 1
1.2 UWB原理與特色 2
1.3 論文架構 5

第二章 應用於RF IC 之射頻晶片變壓器 7
2.1 被動元件與IC設計[5] 7
2.2 變壓器之原理[6] 9
2.3 變壓器之參數與架構[7] 10
2.4 變壓器之等效模型 13
2.5 變壓器特性指標 17
2.6 變壓器範例 19
2.7 變壓器設計 27

第三章 使用變壓器之低電壓高隔離度吉伯特混波器 29
3.1 混波器簡介 29
3.2 設計動機 31
3.3 應用在混波器之變壓器設計 32
3.4 使用變壓器之混波器的設計 37
3.5 模擬與量測結果 45
3.6 結果與討論 50

第四章 使用變壓器之3-5-GHz 低電壓射頻接收機前端電路 53
4.1 研究動機 53
4.2 架構簡介 54
4.3 變壓器回授之寬頻低雜訊放大器 55
4.4 寬頻變壓器式平衡器 59
4.5 使用變壓器之寬頻混波器 63
4.6 模擬結果與討論 66

第五章 結論 73

附錄A 3-10-GHz寬頻CMOS 收發切換開關 79
A.1 研究動機 79
A.2 CMOS 切換開關簡介 79
A.3 Body-Floating 架構簡介 81
A.4 3-10-GHz寬頻CMOS 收發切換開關電路設計 84
A.5 模擬與量測結果 86
A.6 結論 89
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