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系統識別號 U0026-0812200913542412
論文名稱(中文) 圓柱形加熱器內多片晶圓溫度分佈
論文名稱(英文) The Temperature Distribution of Multiple Wafers in a Cylindrical Furnace
校院名稱 成功大學
系所名稱(中) 航空太空工程學系專班
系所名稱(英) Department of Aeronautics & Astronautics (on the job class)
學年度 95
學期 2
出版年 96
研究生(中文) 楊志國
研究生(英文) Chih-Kuo Yang
學號 p4793101
學位類別 碩士
語文別 英文
論文頁數 28頁
口試委員 指導教授-陳介力
口試委員-楊文彬
口試委員-張國明
中文關鍵字 溫度均勻性  熱處理 
英文關鍵字 temperature uniformity  dummy wafer 
學科別分類
中文摘要 在半導體製作中許多製程需要熱處理。在一些製程中熱是其中一項控制因子,但在熱處理製程中熱是最重要的一項控制因子。本論文的目的在於探討熱處理製程中填充樣板(dummy)晶圓的需要性以及在熱處理爐管中12吋晶圓溫度的均勻性。本篇使用FLUENT軟體來模擬爐管中晶圓表面溫度。發現到在中間的晶圓可以到達所需要的溫度均勻性,但是在底部的晶圓溫度比平均的溫度低而且溫度的均勻性也差。這顯示出為了到達可接受的晶圓表面溫度分佈填充樣板晶圓是必要的。
英文摘要 In semiconductor procedure, many processes require thermal treatments. Within some manufacturing processes temperature is one of process control factors, but in thermal process temperature is the most important control factor. The purpose of this research is to examine the necessity of dummy wafer under thermal process and to analyze the temperature uniformity of a 300mm wafer inside thermal processing furnace. The software FLUENT was applied to simulate the wafer surface temperature in furnace. It is found that the temperature at the centering wafers can reach the required temperature uniformity and the temperature of the bottom wafers is lower than the average temperature with poor uniformity. It reveals that the use of dummy wafer is necessary to achieve acceptable surface temperature distribution of wafer.
論文目次 CONTENTS
Page
ABSTRACT I
ACKNOWLEDGMENT III
CONTENTS IV
LIST OF TABLES VI
LIST OF FIGURES VII
NOMENCLATURE VIII

CHAPTER I. INTRODUCTION 1
1.1 Historical Review . 1
1.2 Research Motivation 3
CHAPTER II. THERMAL PROCESS MACHINE 4
2.1 The component of Thermal Process Tool 4
2.2 The Flow Chart of Thermal Process 5
2.3 The Structure of Furnace 6
CHAPTER III. THERMAL PROCESS MODELING FOR VERTICAL
FURNACE AND NUMERICAL ANALYSIS BY FLUENT 8
3.1 Mathematic Modeling Set Up 8
3.1.1 Mass Equation 8
3.1.2 Momentum Equation 9
3.1.3 Energy Equation 9
3.2 Numerical Analysis by FLUENT 10

3.2.1 Mesh Set Up 11
3.2.2 Numerical Solution Flow 13
3.2.3 Operating Conditions, Model of Solver, Material Properties and Boundary Condition 14
CHAPTER VI. NUMERICAL STUDY 18
4.1 Velocity flow distribution in chamber 18
4.2 Pressure Distribution in Chamber 19
4.3 Temperature Distribution in Chamber 20
4.4 Numerical Results 21
4.4.1 Temperature distribution 21
4.4.2 Temperature distribution and its comparison to thickness 25
CHAPTER V. CONCLUSIONS 26
Conclusions 26
REFERENCES 27
VITA 28
參考文獻 [1] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, Prentice Hall, 2001
[2] H.A. Load, “ Thermal and stress Analysis of Semiconductor Wafers in a Rapid Thermal Processing Oven”, IEEE Transactions on Semiconductor Manufacturing , Vol. 1, No. 3, Aug. 1988
[3] L. Young and A. Mcdonald, “Effect of Radiation Shield Angle on Temperature and Stress Profile During Rapid Thermal Annealing”, IEEE Transactions on Semiconductor Manufacturing , Vol. 3, No. 4, Nov. 1990.
[4] A. Campbell, K.H. Ahn, K.L. Knutson, Y. H. Liu, and D. Leighton, “ Steady-state Thermal Uniformity and Gas Flow Patterns in a Rapid Thermal Processing” IEEE Transactions on Semiconductor Manufacturing, Vol. 4, No. 1, Feb. 1991.
[5] A. Campbell, and L. Knutson“ Transient Effects in Rapid Thermal Processing” IEEE Transactions on Semiconductor Manufacturing, Vol. 5, No. 4, Nov. 1992.
[6] A. Kersch, H. Schafer, and C. Werner, “Improvement of Thermal Uniformity of RTP-CVD Equipment by Application of Simulation”, Electron Device Meeting, Technical Digest., International, 1991
[7] Basic Operations Manual, Tokyo Electron Limit, 2001
[8] FLUENT 5 User’s Guide, Fluent Inc. July 1998
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