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系統識別號 U0026-0708201911384200
論文名稱(中文) 氧化鋅鎂/氧化鋅異質結構薄膜之壓電性質研究
論文名稱(英文) Investigation of piezoelectric properties of MgxZn1-xO/ZnO heterostructure thin films
校院名稱 成功大學
系所名稱(中) 材料科學及工程學系
系所名稱(英) Department of Materials Science and Engineering
學年度 107
學期 2
出版年 108
研究生(中文) 陳信宏
研究生(英文) Hsin-Hung Chen
學號 N56064012
學位類別 碩士
語文別 中文
論文頁數 103頁
口試委員 指導教授-黃肇瑞
共同指導教授-劉全璞
口試委員-丁志明
口試委員-齊孝定
口試委員-陳嘉勻
中文關鍵字 氧化鋅鎂  氧化鋅  異質結構  濺鍍  壓電係數 
英文關鍵字 Magnesium zinc oxide  Zinc oxide  Heterostructures  Sputtering  Piezoelectric coefficient (d33) 
學科別分類
中文摘要 氧化鋅 (Zinc oxide, ZnO) 為一 n 型半導體材料,具有直接且寬的能隙 (3.3 eV) 以及較高的激子束縛能 (60 meV),加上良好的生物相容性、熱穩定性、對環境友善以及低成本等優點,被廣泛應用於各大領域當中。此外,不具中心對稱的纖鋅礦結構及顯著的 c 軸優選取向,使其亦具有優異的壓電性質。與鎂合金化後的氧化鋅鎂,透過鎂含量的變化,能夠大幅調控材料的能隙,因此被廣泛用於光電元件中。為了提升元件效能,形成異質結構是常見的方法之一,透過材料本身極化效應與能帶不連續所造成的位能井,能夠更有效地調控載子傳輸行為。而當中鎂離子與鋅離子的半徑差異,及異質結構中因為晶格不匹配所累積的應力,皆預期能夠優化材料的壓電性質。
本研究結合了合金化與異質結構的特性,試圖改善氧化鋅的壓電係數 (12.4 pm/V),利用氧化鋅及氧化鎂靶材於射頻磁控濺鍍系統進行共濺鍍,製備氧化鋅鎂/氧化鋅異質結構薄膜於矽(111)基板上,同時製備單層氧化鋅鎂薄膜作為對照。在固定基板溫度、氣體種類與流量等參數,僅改變氧化鎂靶材的瓦數,探討在不同鎂含量以及單層與異質結構薄膜的情況下,對於微結構、光學、電學性質等影響,並找出最佳壓電係數(d33)。而由實驗結果可知,於較低鎂含量(< 19.12 %)下的氧化鋅鎂/氧化鋅異質結構薄膜能夠與單層氧化鋅鎂薄膜一樣具有明顯的柱狀晶結構,同時維持優選取向。此外,最佳的壓電係數為 47.5 pm/V,是純氧化鋅的 3.8 倍,與單層氧化鋅鎂薄膜最佳壓電係數 41.7 pm/V 相比亦增加了 14 %,證實合金化能夠有效改善壓電性質,而形成異質結構能夠再獲得更進一步的提升。
近年來,王中林教授提出壓電電子效應 (piezotronic effect) 的概念,結合半導體與壓電特性,應用於元件當中能夠有效提升其性能表現。本實驗亦對於具有最佳壓電係數的單層氧化鋅鎂薄膜及氧化鋅鎂/氧化鋅異質結構薄膜進行電流-電壓曲線量測,同時與純氧化鋅薄膜進行比較,並施加不同程度的壓應力,觀察壓電係數與壓電電子效應的關聯性。實驗結果顯示,隨著壓應力的上升,三者的電流值皆有不同程度的增加。經由電流值差異去推算蕭特基能障的高度下降量,可觀察到改變量與壓電係數呈現正相關,證實較高的壓電係數能使壓電電子效應更加顯著。此結果將有助於未來發展異質結構元件,並使元件之性能進一步獲得提升。
英文摘要 We investigate the piezoelectric coefficient (d33) of MgxZn1-xO and MgxZn1-xO/ZnO films with the variation of the Mg concentration. The films are grown on Si (111) substrate using MgO and ZnO as targets by radio frequency magnetron sputtering. The thickness of all the films is fixed at around 500 nm for both MgxZn1-xO and MgxZn1-xO/ZnO films. All the films have high crystallinity with preferred orientation along c-axis and that shows columnar microstructures by X-ray diffractometry, Scanning electron microscopy and Transmission electron microscopy. Besides, the substitution of magnesium ions at zinc sites is confirmed by X-ray diffraction patterns and UV-Visible spectroscopy. The d33 values reach 41.7 pm/V and 47.5 pm/V for MgxZn1-xO and MgxZn1-xO/ZnO (x = 0.30) films which is around 3.4 and 3.8 times larger than pure ZnO films (12.4 pm/V) by piezoelectric force microscopy. The films may be considered as promising candidate for piezoelectric nanogenerators and piezotronic transistors.
論文目次 摘要 I
Extended Abstract III
致謝 XV
總目錄 XVII
圖目錄 XX
表目錄 XXVI
第一章 緒論 1
1-1. 前言 1
1-2. 研究動機與目的 3
第二章 文獻回顧 4
2-1. 濺鍍 4
2-1-1. 電漿介紹 4
2-1-2. 濺鍍原理 7
2-1-3. 射頻磁控濺鍍 10
2-1-4. 薄膜的沉積 13
2-2. 氧化鋅之特性 15
2-2-1. 晶體結構 15
2-2-2. 物理性質 17
2-2-3. 本質缺陷 20
2-3. 壓電特性 22
2-3-1. 壓電性質 22
2-3-2. 壓電係數 27
2-4. 氧化鋅鎂合金系統 30
2-5. 異質結構 35
2-5-1. 異質結構簡介 35
2-5-2. 壓電電子效應用於異質結構 38
第三章 研究方法與實驗步驟 43
3-1. 實驗流程 43
3-2. 實驗材料 44
3-3. 實驗設備 44
3-4. 濺鍍的步驟及條件 45
3-4-1. 基板前處理 45
3-4-2. 薄膜濺鍍流程 45
3-4-3. 元件製作 47
3-5. 薄膜的性質分析 48
3-5-1. 元素成分與化學鍵結分析 48
3-5-2. 晶體結構分析 48
3-5-3. 表面形貌與微結構分析 49
3-5-4. 光學性質分析 50
3-5-5. 霍爾效應分析 51
3-5-6. 壓電係數分析 52
3-5-7. 壓電電子效應量測 54
第四章 結果與討論 55
4-1. 元素成分與化學鍵結分析 55
4-2. 晶體結構分析 60
4-3. 表面形貌與微結構分析 67
4-4. 光學性質分析 75
4-5. 霍爾性質分析 80
4-6. 壓電性質分析 84
4-7. 電壓電流曲線分析 90
第五章 結論 94
參考文獻 96
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