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系統識別號 U0026-0707201411223500
論文名稱(中文) 以化學水浴沉積法製備硫化鎘緩衝層於硒化銅銦太陽能電池上的研究
論文名稱(英文) Study of the CdS Buffer Layer on CuInSe2 Thin Film Solar Cell by Chemical Bath Deposition Methods
校院名稱 成功大學
系所名稱(中) 微電子工程研究所
系所名稱(英) Institute of Microelectronics
學年度 102
學期 2
出版年 103
研究生(中文) 葉乃綾
研究生(英文) Nai-Ling Yeh
學號 Q16014249
學位類別 碩士
語文別 中文
論文頁數 113頁
口試委員 指導教授-洪茂峰
口試委員-王永和
口試委員-陳巽欽
口試委員-王納富
口試委員-周德威
中文關鍵字 CIS太陽能電池  硫化鎘(CdS)  化學水浴沉積法(CBD) 
英文關鍵字 CIS Solar cell  Cadmium sulfide (CdS)  Chemical bath deposition (CBD) 
學科別分類
中文摘要 現今銅銦硒(CuInSe)或銅銦鎵硒(CuInGaSe)高效能太陽能電池皆使用化學水浴法製備硫化鎘(CdS)緩衝層。因CdS緩衝層具有良好的披覆性,且Cd有機會擴散到吸收層形成良好的P-N接面。此CdS也可當作是一個窗口層,窗口層意謂著要具有高穿透及高導電之特性。
因此,在本論文中將使用化學水浴沉積法製備CdS緩衝層。藉由調整沉積溫度、沉積時間、硫濃度、回火溫度等製程參數,使其具有高穿透、高披覆性及高導電的特性。當沉積溫度80ºC、沉積時間35分鐘、硫脲硫酸鎘藥品比例 [S]/[Cd]=1、回火200ºC、10分鐘,可以獲得良好的薄膜緻密度、結晶性、高穿透與高導電特性,其電阻率為3.77Ω_cm、平均穿透率72%、厚度為80nm及載子濃度為1.24x1018 cm-3。與未最佳化參數比較,其最佳參數應用在CIS元件上,短路電流密度從6.21mA/cm2被改善到21.61mA/cm2,開路電壓從0.15V被改善到0.28 V,轉換效率從0.27% 被改善到2.52%。
英文摘要 The copper-indium-selenide (CIS) or copper-indium-gallium-selenide (CIGS)-based high efficiency solar cells were prepared the cadmium sulfide (CdS) buffer layer by using chemical bath deposition methods generally. In this thesis, we want to improve the transmittance and conductivity of the CdS buffer layer by using chemical bath deposition methods on CIS-based solar cells. We adjust process parameters of the deposition temperature (80ºC), deposition time (35 min), the sulfur concentration ([S]/[Cd]=1), and annealing temperature (200ºC) to achieve high transmittance, high conductivity, and high coverage.
論文目次 摘要 I
Abstrate II
誌謝 V
目錄 VII
表目錄 X
圖目錄 XI

第1章 緒論 1
1-1 研究背景 1
1-2 CdS發展及概況 8
1-3 研究動機及目的 10
第2章 理論基礎與文獻探討 12
2-1 太陽能光譜介紹 12
2-2 太陽能電池基本原理 14
2-2-1 半導體原理 14
2-2-2 電路模型 18
2-2-3 特性與效率 20
2-3 太陽能電池元件結構 23
2-3-1 背電極鉬(Mo)與鈉玻璃基板(SLG) 23
2-3-2 CuInSe2(CuInAlSe2)主吸收層 24
2-3-3 CdS緩衝層 24
2-3-4 AZO透明導電膜透光層 26
2-3-5 Al前電極 26
2-4 薄膜材料介紹 27
2-4-1 CdS硫化鎘的介紹 27
2-4-2 CdS材料的製備 28
2-4-3 化學水浴沉積法的介紹 28
2-4-4 CdS薄膜的成長機制 31
2-4-5 CdS化學反應式 35
2-5 實驗參數對硫化鎘薄膜之影響 37
2-5-1 不同鎘來源之影響 37
2-5-2 反應溫度之影響 39
2-5-3 反應時間之影響 41
2-5-4 鎘與硫成分比例之影響 42
第3章 實驗方法與量測方法 43
3-1 實驗流程 43
3-2 實驗藥品 46
3-3 實驗參數 46
3-4 量測儀器介紹 47
3-4-1 場發射掃描式電子顯微鏡(FE-SEM ) 47
3-4-2 能量分析光譜儀(EDS) 48
3-4-3 X光繞射儀(XRD) [42] 48
3-4-4 四點探針 51
3-4-5 Alpha-Step表面粗度儀 52
3-4-6 紫外光-可見光光譜儀(UV_VIS) 53
3-4-7 霍爾效應量測(Hall Effect Measurement) 54
3-4-8 光激發螢光量測(Photoluminescence, PL)[46] 58
第4章 結果與討論 61
4-1 初步元件製作的問題 61
4-2 沉積溫度對CdS的影響 64
4-2-1 沉積溫度變化對於結晶品質之影響 64
4-2-2 沉積溫度變化對於表面形貌之影響 66
4-2-3 沉積溫度變化對於光學特性之影響 67
4-2-4 沉積溫度變化對於電特性之影響 69
4-2-5 沉積溫度變化對於元件效率之變化 71
4-3 沉積時間對CdS的影響 73
4-3-1 沉積時間變化對於結晶品質之影響 73
4-3-2 沉積時間變化對於表面形貌之影響 75
4-3-3 沉積時間變化對於光學特性之影響 76
4-3-4 沉積時間變化對於電特性之影響 78
4-3-5 沉積時間變化對於元件效率之變化 79
4-4 [S] / [Cd]比例的影響 82
4-4-1 [S] / [Cd]比例變化對於結晶品質之影響 83
4-4-2 [S] / [Cd]比例變化對於表面形貌之影響 85
4-4-3 [S] / [Cd]比例變化對於光學特性之影響 87
4-4-4 [S] / [Cd]比例變化對於電特性之影響 89
4-4-5 [S] / [Cd]比例變化對於元件效率之變化 92
4-5 回火溫度對於CdS的影響 95
4-5-1 回火溫度變化對於結晶品質之影響 95
4-5-2 回火溫度變化對於表面形貌之影響 97
4-5-3 回火溫度變化對於光學特性之影響 98
4-5-4 回火溫度變化對於電特性之影響 99
4-5-5 回火溫度變化對於元件效率之變化 103
第5章 結論 106
參考文獻 108
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