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系統識別號 U0026-0607202014481400
論文名稱(中文) 以ITO薄膜應用於CuInSe2奈米柱太陽能電池
論文名稱(英文) Investigation of the ITO/CuInSe2 Nanorod Solar Cells
校院名稱 成功大學
系所名稱(中) 微電子工程研究所
系所名稱(英) Institute of Microelectronics
學年度 108
學期 2
出版年 109
研究生(中文) 王柏文
研究生(英文) Po-Wen Wang
學號 Q16074095
學位類別 碩士
語文別 中文
論文頁數 138頁
口試委員 指導教授-洪茂峰
口試委員-王永和
口試委員-施博文
口試委員-陳立軒
口試委員-楊證富
中文關鍵字 氧化銦錫薄膜  二硒化銅銦奈米柱  二極體元件  太陽能電池 
英文關鍵字 ITO thin film  CuInSe2 nanorods  diode  solar cells 
學科別分類
中文摘要 本論文主要利用三極電鍍法製備二硒化銅銦奈米柱,是藉由薄膜式陽極氧化鋁(Anodic aluminum oxide, AAO)模板來輔助製備。將模板完全移除後得到CuInSe2(CISe)奈米柱,將其當作光電元件的吸收層,並在奈米柱上方使用直流濺鍍一層高穿透率及高導電性質的氧化銦錫(Indium Tin Oxide, ITO)薄膜,可以用來當作光電元件的窗口層。應用於光電元件,利用奈米柱結構與平面結構相比較,奈米柱結構具有高抗反射能力以及較多的吸光面積,期望透過此種一維奈米結構,能進一步提升光電轉換能力。
利用以上結構形成具整流特性之P-N接面二極體。利用各層材料的最佳參數製備奈米柱光電元件,並量測其二極體整流電性,其順向電流密度為5.67 mA/cm2、逆向電流密度為-0.26 mA/cm2以及順逆向電流密度比值為21.8倍。應用於太陽能電池,得到短路電流密度為0.082mA/cm2、開路電壓為0.75 volt、填充因子為0.519以及光電轉換效率為0.0319 %。
英文摘要 In this research, the pulsed three-electrode plating method is used to fabricate the CuInSe2 (CISe) nanorods through anodic aluminum oxide (AAO) template. After template removing, CISe nanorods are used as the absorption layer. Using the DC-sputtering method is used to deposit the indium tin oxide (ITO) thin film with high transmittance and good conductivity on the CISe nanorods. Compared with the planar structure, nanorod structure has the advantages of high anti-reflection capability and more light absorption area. Therefore, it is expected that the nanorod structure has good photoelectric conversion capability, which can be applied to optoelectronic devices inclusive of the solar cell, photodetector and image sensor.
This research adopts the top-down structure of ITO thin film, CISe nanorod and p-type heavily doped silicon substrate to form the P-N junction diode with rectifying characteristics. With the optimal parameters of each layer, the electrical characteristics of the nanorod photoelectric element is the rectification of the diode with the forward current density 5.67 mA/cm2、the reverse current density -0.26 mA/cm2 and the on/off ratio is 21.8 times. Applied to the solar cell, the short circuit current density is 0.082 mA/cm2, the open circuit voltage is 0.75 volt, the fill factor is 0.519, and the photoelectric conversion efficiency is 0.0319%.
論文目次 摘要I
SUMMARYII
致謝XI
目錄XIV
表目錄XX
圖目錄XXII
第一章 緒論1
1-1前言1
1-2太陽能電池簡介3
1-2-1太陽能電池歷史簡介3
1-2-2太陽能電池基本原理5
1-2-3太陽能電池原理及相關參數6
1-3奈米結構材料10
1-3-1奈米柱材料10
1-3-2製備奈米柱結構12
1-3-3 CuInSe2奈米柱太陽能電池13
1-4研究動機14
第二章 實驗理論基礎15
2-1陽極氧化鋁模板理論15
2-1-1陽極氧化鋁模板簡述15
2-1-2陽極氧化鋁模板特性15
2-1-3陽極氧化鋁模板結構介紹16
2-1-4產生陽極氧化鋁模板之相關化學式19
2-1-5製備陽極氧化鋁模板反應機制20
2-1-6薄膜式陽極氧化鋁模板21
2-2二硒化銅銦材料22
2-2-1二硒化銅銦材料結構22
2-2-2二硒化銅銦材料特性24
2-2-3製備二硒化銅銦材料方式25
2-3氧化銦錫材料27
2-3-1電極材料27
2-3-2薄膜成長機制28
2-3-3氧化銦錫基礎介紹30
2-3-4氧化銦錫導電傳輸機制30
2-3-5氧化銦錫薄膜調變參數31
2-3-6氧化銦錫薄膜之結晶結構32
2-3-7氧化銦錫薄膜之光學性質33
2-4電鍍原理簡介34
2-4-1電鍍原理34
2-4-2電化學沉積系統35
2-4-3影響電化學沉積參數探討37
第三章 實驗方法與量測儀器介紹42
3-1實驗流程42
3-1-1前置鋁薄膜相關製程43
3-1-2製備陽極氧化鋁模板相關製程45
3-1-3製備CuInSe2奈米柱吸收層48
3-1-4移除陽極氧化鋁模板50
3-1-5製備ITO薄膜窗口層50
3-2 實驗藥品51
3-2-1前置鋁薄膜製程相關藥品51
3-2-2陽極氧化鋁模板相關藥品51
3-2-3 CuInSe2奈米柱相關藥品52
3-2-4 移除陽極氧化鋁模板相關藥品52
3-3 實驗製程參數53
3-3-1 直流濺鍍ITO參數53
3-3-2 陽極氧化鋁模板參數53
3-3-3 移除陽極氧化鋁模板參數54
3-3-4電鍍CuInSe2奈米柱參數54
3-4 實驗相關量測儀器56
3-4-1熱蒸鍍系統(Thermal Evaporation System)56
3-4-2共濺鍍系統(Co-Sputter System)57
3-4-3高溫爐管退火系統(Tubular Furnace Annealing)58
3-4-4快速熱退火爐管系統(Rapid Thermal Annealing Furnace)59
3-4-5 X光繞射儀(X-Ray Diffraction,XRD)60
3-4-6高解析掃描式電子顯微鏡(Fe-SEM)62
3-4-7能量分析光譜儀(EDS)63
第四章實驗結果與探討64
4-1實驗項次與架構64
4-2製備陽極氧化鋁模板與參數調整66
4-3 CuInSe2奈米柱電鍍參數分析70
4-3-1工作週期參數調變(Duty Cycle Modulation)71
4-3-2首次DMSO濃度參數調變75
4-3-3PH值參數調變與執行RTA退火製程78
4-3-4第二次DMSO濃度調變83
4-3-5電化學沉積CISe奈米柱參數總結86
4-4 CuInSe2奈米柱材料分析87
4-4-1元素分析(EDS)87
4-4-2 XRD分析88
4-4-3 UV-Vis分析89
4-4-4 TEM分析(LM、EDS、Line-scanning、Mapping、NBD)90
4-5製備ITO薄膜與濺鍍參數調整96
4-5-1基板溫度調變(Substrate Temperature Modulation)96
4-5-2通入氧氣流量調變(Oxygen Flow Rate Modulation)101
4-5-3直流濺鍍ITO薄膜參數總結107
4-6 ITO薄膜材料分析108
4-6-1奈米柱元件結構的光學特性108
4-6-2 ITO薄膜之TEM分析(LM、EDS、SAD)109
4-7奈米柱元件的二極體分析113
4-7-1DMSO濃度調變(Substrate Temperature Modulation)114
4-7-2奈米柱高度調變(Nanorod Height Modulation)117
4-7-3元件電性參數總結122
4-8奈米柱太陽能電池應用123
4-8-1奈米柱高度調變(Nanorod Height Modulation)123
第五章 結論127
第六章 未來展望133
參考文獻134
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