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系統識別號 U0026-0508201416293300
論文名稱(中文) 應用於奈米衛星之電子溫度密度探測器的研發
論文名稱(英文) Development of TeNeP Instrument for Nanosatellites
校院名稱 成功大學
系所名稱(中) 太空與電漿科學研究所
系所名稱(英) Institute of Space and Plasma Sciences
學年度 102
學期 2
出版年 103
研究生(中文) 徐宇威
研究生(英文) Yu-Wei Hsu
學號 LA6001111
學位類別 碩士
語文別 英文
論文頁數 111頁
口試委員 指導教授-陳秋榮
共同指導教授-小山孝一郎
口試委員-西田靖
中文關鍵字 DC蘭摩爾探針  電子溫度密度探測器  浮動電位偏移量  奈米衛星 
英文關鍵字 DC Langmuir probe  electron temperature and density probe  floating potential shift  nanosatellites 
學科別分類
中文摘要 奈米衛星將成為研究地球附近電漿環境的主流之一。這些衛星可用作“單一儀器衛星”來量測必要的電漿參數。DC蘭摩爾探針是一個被廣泛應用於量測電漿的儀器。但是使用於奈米衛星任務中,DC蘭摩爾探針遭遇了一個問題;當衛星導體面積不夠大時,無法提供探針穩定的地電位,因此衛星電位被迫下降,進而影響蘭摩爾探針量測到的電流-電壓特性曲線。本論文的目的是研發一不受衛星電位影響的電漿量測儀器--電子溫度密度探測器(TeNeP)--來量測電子溫度和密度。TeNeP的研發是透過修改電子溫度探測器(ETP)的電路系統以增加一個掃頻之射頻(RF)信號電路。ETP早在40年前研發出,透過量測因單頻RF信號而造成之浮動電位偏移量來決定電子溫度。但當一個掃頻RF信號加在ETP的探測器時,TeNeP可透過量測因高區混合共振(upper hybrid resonance)而造成之浮動電位偏移量來決定電子密度。因為浮動電位偏移量不會受到衛星電位的影響,因此,電子溫度密度探測器克服了蘭摩爾探針在有限衛星面積下的量測問題。
英文摘要 The nanosatellites will become one of the mainstreams especially for the study of near earth plasma environment. These satellites can be used as a “single instrument satellite” which measures only some necessary parameters. DC Langmuir probe is the instrument that is most commonly used to measure the electron characteristics of plasma. However, the DC Langmuir probe encounters a problem for nanosatellite missions because these satellites cannot provide a sufficient conductive surface area for the ground potential which is needed for Langmuir probe, and the satellite potential may be forced to decrease to influence the I-V curve from the Langmuir probe’s measurement. The goal of this thesis is to develop the electron temperature and density probe (TeNeP) which measures the floating potential shift between two probes to determine the electron temperature and density. TeNeP is developed by modifying the electron temperature probe (ETP) which was developed more than 40 years ago for measuring the floating potential shift due to a fixed frequency RF signal applied to the probe to determine the electron temperature. By adding a sweeping frequency circuit to the ETP electronic system, TeNeP can also determine the electron density by measuring the floating potential shift associated with the upper hybrid resonance. Because the floating potential shift is not changed by the satellite potential, TeNeP can overcome the problem of the DC Langmuir probe measurement associated with finite satellite conductive surface area.
論文目次 摘要 ........................................................................................................................... I
Abstract ................................................................................................................... II
誌謝 ......................................................................................................................... III
Content ................................................................................................................... IV
List of Tables .......................................................................................................... VI
List of Figures ........................................................................................................ VII
Chapter 1 Introduction .......................................................................................... 1
1.1 Ionosphere ................................................................................................... 1
1.2 Purpose of this thesis ................................................................................... 4
Chapter 2 Electron Current and Ion Current .................................................... 10
2.1 Electron Current ........................................................................................ 10
2.2 Ion Current ................................................................................................. 13
2.3 Voltage-Current Characteristic for Langmuir Probe .................................. 15
2.3.1 Measurement of Electron Temperature and Density ........................ 17
Chapter 3 Electron Temperature Probe and Impedance Probe Theory ........... 18
3.1 Principle of Electron Temperature Probe ................................................... 18
3.2 System Configuration of Electron Temperature Probe ............................... 22
3.3 Sheath Effect .............................................................................................. 24
3.3.1 Sheath Impedance ............................................................................ 29
3.3.2 Effect of Feeding Capacitor ............................................................. 34
3.4 Principle of Impedance Probe .................................................................... 37
3.5 System Configuration of Impedance Probe ............................................... 39
3.6 Sheath Effect .............................................................................................. 41
3.6.1 Effect of Feeding Capacitor ............................................................. 43
Chapter 4 Electron Temperature and Density Probe System ............................ 46
4.1 System Configuration ................................................................................ 46
4.2 Electric Circuit Design............................................................................... 47
4.2.1 Signal Source-RF Circuit ................................................................. 49
4.2.2 Second Stage Circuit ....................................................................... 64
4.2.3 Electric Circuit Diagram .................................................................. 67
4.3 Sensor ........................................................................................................ 71
4.4 Laboratory Experiment System Architecture ............................................. 72
4.4.1 Plasma Chamber .............................................................................. 73
4.4.2 Plasma Source ................................................................................. 74
4.5 Testing Before Plasma Chamber Experiment ............................................ 75
Chapter 5 Experiment Results ............................................................................. 77
5.1 Electron Temperature Probe System .......................................................... 77
5.1.1 Effect of Oscillator Frequency ......................................................... 78
5.2 Impedance Probe System ........................................................................... 86
5.2.1 Effect of Feeding Capacitance ......................................................... 86
5.3 Electron Temperature and Density Probe System ...................................... 92
5.3.1 Comparison of Te and Ne measurement between TeNeP and LP ..... 92
5.3.2 Comparison of Te and Ne measurement for different magnetic field 97
5.3.3 Plasma Distribution in SPOC ........................................................ 103
Chapter 6 Conclusion ......................................................................................... 109
References ............................................................................................................ 110
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