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系統識別號 U0026-0311201416452700
論文名稱(中文) 以粒子網格法在電漿製程中模擬非對稱二次電子激發之現象
論文名稱(英文) Particle-In-Cell Simulation of Asymmertic Secondary Electron Emission in Plasma Processing
校院名稱 成功大學
系所名稱(中) 太空與電漿科學研究所
系所名稱(英) Institute of Space and Plasma Sciences
學年度 103
學期 1
出版年 103
研究生(中文) 黃俊維
研究生(英文) Chun-Wei Huang
學號 LA6011035
學位類別 碩士
語文別 英文
論文頁數 47頁
口試委員 指導教授-西村泰太郎
口試委員-談永頤
口試委員-西田靖
中文關鍵字 粒子網格法  二次電子  非對稱系統 
英文關鍵字 Particle-in-Cell  Secondary electron emission  Asymmetric system 
學科別分類
中文摘要 本研究使用粒子網格法(Particle-in-Cell法)模擬環境為一維空間、一維速度,兩極板為非對稱的系統條件下,探討其因為二次電子的發射產生的不穩定行為,並試圖去控制。
本PIC模型假設條件還考慮到自恰電場。通過數值模擬的結果,可以發現二次電子的發射系數 γ 的增加使得電漿電位逐漸得消失。而且因為二面牆不同的邊界條件 γ 和電位 Φ 而形成的非對稱系統,在短時間的模擬,二面牆之間產生了淨電流而影響了電位差。另外也發現,如果有更多的二次電子被發射出來,將會使得電位差更大。通過長時間的數值模擬,它證明了只要 γ<1.0電漿放電被保證是穩定的。
英文摘要 Simulating the electron behavior (without ion) in plasma for one-dimensional in the configuration space, one-dimensional in the velocity space using Particle-in-Cell (PIC) method, between two plates in asymmetric systems is investigated. The secondary electron emission (SEE) effects which can make sheath potential is unstable discussed.
The PIC model takes into account of the self-consistent electric field. By numerical simulation result, it is found that increasing secondary electron emission coefficient γ makes plasma potential progressively small and finally the sheath potential disappear. Furthermore, different boundary condition for γ and potential Φ for two walls are given to make asymmetric system, which generates a net current between two walls and affects their potential difference in short term. It is found that the larger population of emitted electrons make the potential difference larger. By a long term numerical simulation, it is demonstrated that the plasma discharge is guaranteed to be stable as long as γ<1.0.
論文目次 Contents
摘要 I
Abstract II
Acknowledgements III
Contents IV
List of Figures VI
List of Abbreviations VIII
Chapter 1 Introduction 1
1.1 Background and Purpose 1
1.2 Numerical Simulation as a Research Tool 3
1.3 Thesis Overview 4
Chapter 2 Theoretical and Computational Model 5
2.1 Plasma Simulation 5
2.2 Governing Model Equations 5
2.3 Normalization of Vlasov-Poisson System 6
2.5 Particle-In-Cell Method 8
2.5.1 The Initial Loading and Random Number Generator 9
2.5.2 Weighing Particles and Gathering Charge 10
2.5.3 Solving Poisson’s Equation 11
2.5.4 Interpolating Electric Field 12
2.5.5 Pushing Particles 15
2.6 Free Streaming of Electrons as an Initial Excercise 16
2.7 Verification of Poisson solver 19
Chapter 3 Background of Needs in Plasma Processing Technologies and Plasma-Surface Interaction 21
3.1 Plasma Anisotropy as the Key Element in the Success of Plasma Processing. 21
3.2 Usefulness of the PIC Simulation for Various Plasma Application 22
Chapter 4 Plasma Processing and Secondary Electron Emission 24
4.1 The Planar Sheath Equation and the Bohm Sheath Criterion 24
4.2 Secondary Electron Behavior 27
4.3 Effects of Secondary Electron Emission on Sheath Potential 29
4.4 Velocity Distribution in the Presence of Secondary Electrons 34
4.5 Investigation of Asymmetric Planar Systems 36
4.5.1 Short Time Behavior Comparable to an Electron Bounce Time 37
4.5.2 Long Time Behavior 41
Chapter 5 Summary and Future Work 43
5.1 Summary 43
5.2 Future Work 44
Reference 45
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