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系統識別號 U0026-0209201912331200
論文名稱(中文) 利用數值分析模擬閘極引發源極漏電流之雙閘極電晶體
論文名稱(英文) Modeling GIDL Leakage Current of Double Gate FET by Numerical Calculation
校院名稱 成功大學
系所名稱(中) 奈米積體電路工程碩士學位學程
系所名稱(英) MS Degree Program on Nano-Integrated Circuit Engineering
學年度 107
學期 2
出版年 108
研究生(中文) 吳宗讓
研究生(英文) Tzung-Rang Wu
學號 Q76064068
學位類別 碩士
語文別 英文
論文頁數 57頁
口試委員 指導教授-高國興
口試委員-李義明
口試委員-陳南佑
口試委員-李玟頡
中文關鍵字 飄移擴散模型  影型式演算法修正  閘極引發源極漏電流  量子傳輸  非平衡態格林函數  雙閘極金氧半場效電晶體 
英文關鍵字 Drift diffusion model (DD)  Implicit method modification  Gate induce drain current (GIDL)  Non-Equilibrium Green’s function (NEGF)  Double-Gate MOSFETs (DG MOSFETs) 
學科別分類
中文摘要 在數值方法中有許多的迭代方法來解微分方程式,本文利用單調迭代法解古典的飄移擴散模型,使用數值分析將電流連續方程式簡化,加速電腦對矩陣的計算時間,並讓Shockley Read Hall(SRH)與Band to Band Tunneling(BTBT)加入電流方程式中討論,得到電晶體中的漏電流的結果,而在數值的演算中,我們探討SRH與BTBT在顯型式與影型式的演算速度和收斂情況。

本文成功模擬出飄移擴散模型對閘極引發源極漏電流探討,然而CMOS元件大小隨著莫爾定律逐年縮小,尺寸進入到奈米等級,漏電流成為一個相當重要的議題,且需要考慮更多的量子效應來修正結果,如非平衡態格林函數模型,但在此程式只能計算n型元件MOSFET(忽略電洞影響) ,也表示著跟BTBT相關的機制都會被忽略,且在元件中漏電流都會被低估。本文利用半古典方法且考慮電洞的影響模擬出GIDL 漏電流並且討論電流電壓特性曲線和元件中的電場及通道長度。
英文摘要 There are many iterative methods to solve the partial differential equations in the numerical calculations. In this work, we use monotone iterative method to solve the Drift Diffusion model and simplify the current continuity equations to accelerate the computation. Shockley Read Hall (SRH) and band to band tunneling (BTBT) are considered in the current continuity equations accounting for the minimum and leakage currents of a transistor. In the numerical algorithm, we consider the convergence and consumption of system together with the explicit and implicit methods.
In our research, we model the gate-induced drain leakage (GIDL) currents successfully and discuss the results. As CMOS is scaled down, quantum physics becomes more and more important because of the wave nation of electrons and a quantum simulator (such as non-equilibrium Green’s function NEGF) is requested to correctly predict the device performance. Although the open source of NEGF is available (such as nanoMOS in nanohub), it only considers quantum transport on the conduction bands for electrons. This means all mechanisms involving band to band transitions have been neglected, underestimating the off-currents of a device. This research models the GIDL currents and discusses the Id verse Vg current characteristics and electric field of devices with different channel length by a semi-classical method including hole transport.
論文目次 摘要…………………………………………I
ABSTRACT…………………………………………II
誌謝…………………………………………III
CONTENTS…………………………………………IV
FIGURE CAPTIONS……………………………………………………………………………V
CHAPTER I INTRODUCTION…………………………………………1
1-1 CMOS SCALING…………………………………………1
1-2 SHORT CHANNEL EFFECTS OF MOSFETS…………………………………………1
1-3 QUANTUM MECHANICAL EFFECT…………………………………………2
1-4 RESEARCH OBJECTIVE AND DISSERTATION OUTLINE……………………………3
CHAPTER II NUMERICAL METHOD…………………………………………4
2-1 PHYSICAL MODEL…………………………………………4
2-1-1 Drift Diffusion model…………………………………………12
2-1-2 Non-Equilibrium Green Function model……………………………………28
2-2 PHYSICAL MODEL FOR CARRIER GENERATION…………………………………………37
2-2-1 Shockley-Read-Hall Recombination…………………………………………38
2-2-2 Band to Band Tunneling…………………………………………38
2-3 LITERATURE REVIEW…………………………………………39
CHAPTER III METHOD AND RESULT…………………………………………41
3-1 SIMULATION RESULT…………………………………………41
3-2 COMPARE THE IMPLICIT AND EXPLICIT METHOD…………………………………46
3-3 ANALYSIS BAND TO BAND GENERATION RATE AND AVERAGE ELECTRIC FIELD…………………………………………51
CHAPTER IV NEGF-DD COUPLED MODEL…………………………………………53
4-1 INTRODUCTION…………………………………………53
4-2 NEGF-DD COUPLED METHOD…………………………………………53
CHAPTER VI CONCLUSION & FUTURE WORK…………………………………………55
5-1 CONCLUSION…………………………………………55
5-2 FUTURE WORK…………………………………………55
REFERENCES…………………………………………56
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