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系統識別號 U0026-0202201618153100
論文名稱(中文) 利用射頻磁控濺鍍法沉積類鑽碳薄膜及其特性分析
論文名稱(英文) Study on Diamond-Like Carbon Thin Films Fabricated by RF Magnetron Sputtering Deposition
校院名稱 成功大學
系所名稱(中) 地球科學系
系所名稱(英) Department of Earth Sciences
學年度 104
學期 1
出版年 105
研究生(中文) 張韡浩
研究生(英文) Wei-Hao Chang
學號 L46021044
學位類別 碩士
語文別 中文
論文頁數 93頁
口試委員 指導教授-陳燕華
口試委員-吳季珍
口試委員-吳毓純
口試委員-鄧茂華
中文關鍵字 類鑽碳薄膜  射頻磁控濺鍍  拉曼光譜  X光光電子能譜  微觀導電性  片電阻 
英文關鍵字 Diamond-like carbon  Magnetron sputtering  Raman  XPS  AFM 
學科別分類
中文摘要   本實驗以混和式碳來源(石墨靶、甲烷)之射頻磁控濺鍍法來製備類鑽碳薄膜,並且希望藉由調控濺鍍功率、工作氣氛、氣體流量等製程參數來改變薄膜中的sp3、sp2鍵結比例。有鑑於前人研究之分類、成長機構等皆混亂且較無標準,本研究希望能以方便且精準的方式來進行類鑽碳薄膜的特性分析。
  製程參數選用純甲烷,工作壓力5 mtorr,氣體流量5 sccm,室溫下變動濺鍍功率:60、80、90、100、110、130、150 W;並將此七組不同製程參數之類鑽碳薄膜鍍製於非導電矽基板、導電矽基板及玻璃基板上,並分別進行薄膜表面形貌觀察、硬度測試、薄膜應力量測、鍵結狀態分析(拉曼光譜、X光光電子能譜)、能隙量測、微觀導電性分析及片電阻量測。拉曼光譜中主要分析G-band(~1580 cm-1)與D1-band(1350 cm-1)之偏移、ID/IG;XPS則是將C1s擬合出C-C(~285 eV)、C=C(~284 eV)、C-O(~286 eV),並以C-C代表sp3、C=C代表sp2。
  經由拉曼光譜及X光光電子能譜之鍵結組態分析的結果顯示,濺鍍功率60~150 W之樣品中sp3的比例隨濺鍍率提升而升高,並且ID/IG、G-band位置對sp3含量之趨勢與前人研究相符,故本研究成功地結合拉曼光譜及X光光電子能譜之量測,初步建立類鑽碳的行為模式及特性分析。雖然硬度、能隙及導電能力則是受到多種因子影響,如膜厚、雜質、結構缺陷等共同控制,但還是由sp3/sp2之比例主宰。
英文摘要 Diamond-like carbon (DLC) thin films on p-Si (100) substrate, soda-lime glass substrate were deposited by RF magnetron sputtering at different parameters. By changing deposition temperature (25, 100, 200, 300°C) and RF power (60, 80, 90, 100, 110, 130, 150 W) to control properties of films. DLC is a member of carbon system, and Raman spectroscopy is a standard characterization technique for any carbon materials, here we use Raman spectroscopy to classify our films at first, and to discover which parameter has better efficacy. Raman spectroscopy analysis revealed two bands at ~1350 and ~1580 cm-1 called D-band and G-band, we focus on position-shifting and integrating of intensity ratio (ID/IG) of these band that can use to identify sp3/sp2 configuration in the films. ID/IG is a popular and significant index related to sp3/sp2. ID/IG decreases with the decreasing of sputtering energy, which means the higher energy caused more graphitization. Except Raman spectrum, the bonding structure could be investigated through XPS, using fitting software (XPSPEAK 4.1) to separate sp3, sp2, C-O, et cetera in C1s. But there is various way to explain these data and has no any standard for consulting. This study wants to sort out a clear, simple, and reproducible method that can avoid researchers confusing about the meaning of Raman and XPS studies. Furthermore, we also use AFM, UV-Vis, FE-SEM, et cetera instruments to figure out the properties of DLC films within changing the sputtering parameters.
論文目次 中文摘要 i
Extend Abstract ii
誌謝 vi
目錄 I
圖目錄 IV
表目錄 VIII
第一章 緒論 1
1-1 前言 1
1-2 研究歷史 1
1-3 研究動機 2
第二章 材料簡介及實驗原理 4
2-1 類鑽碳膜 4
2-1-1 類鑽碳的定義 4
2-1-2 碳膜的分類 6
2-1-3 氫原子對類鑽碳薄膜結構與特性之影響 8
2-1-4 類鑽碳薄膜的成長機制 8
2-2 濺鍍理論 11
2-2-1 電漿基本原理 11
2-2-2 濺鍍原理 14
2-3 拉曼光譜 16
2-3-1 原理 16
2-3-2 類鑽碳之拉曼特徵譜線 18
2-3-3 拉曼光譜在類鑽碳上的應用 20
2-4 X光光電子能譜儀 21
2-5 固態紫外光-可見光光譜儀 21
2-6 場發射掃描式電子顯微鏡 23
2-7 原子力顯微鏡 24
2-7-1 基本原理及架構 24
2-7-2 成像原理 25
2-7-3 導電式原子力顯微鏡 26
2-8 電性量測-電阻率及片電阻計算 27
2-8-1 電阻率量測 27
2-8-2 片電阻計算 30
2-9 奈米壓痕試驗 30
2-10 光學曲率量測 31
第三章 實驗方法 33
3-1 實驗流程 33
3-1-1 實驗材料 34
3-1-2 實驗設備 35
3-2 靶材製作 36
3-3 基板清洗 36
3-4 薄膜製備 37
3-5 特性分析 39
第四章 結果與討論 42
4-1 鍵結組態 42
4-2-1 拉曼光譜結果 42
4-2-2 XPS結果 53
4-2-3 討論(I) 55
4-2 膜厚量測 58
4-3 物理性質分析 63
4-3-1 硬度測試 63
4-3-2 應力量測 66
4-3-3 能隙量測 67
4-3-4 表面粗糙度分析 70
4-3-5 討論(II) 72
4-4 電性測試 73
4-4-1 CAFM 73
4-4-2 片電阻量測 80
4-4-3 討論(III) 81
第五章 結論 83
參考文獻 84
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